SIRA12BDP-T1-GE3 Vishay Siliconix
4.9 / 5.0 - (324 Ratings)

SIRA12BDP-T1-GE3

Product Overview

13006916

DiGi Electronics Part Number

SIRA12BDP-T1-GE3-DG

Manufacturer

Vishay Siliconix
SIRA12BDP-T1-GE3

Description

MOSFET N-CH 30V 27A/60A PPAK SO8

Inventory

20300 Pcs New Original In Stock
N-Channel 30 V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8
Quantity
Minimum 1

Purchase and inquiry

RFQ (Request for Quotations)

You can submit your RFQ inquiry directly on the product detail page or RFQ page. Our sales team will respond to your request within 24 hours.

Payment method

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IMPORTANT NOTICE

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.7014 0.7014
  • 10 0.7014 7.0140
  • 100 0.7014 70.1400
  • 500 0.7014 350.7000
  • 1000 0.7014 701.4000
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SIRA12BDP-T1-GE3 Technical Specifications

Category FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Vishay

Packaging Cut Tape (CT) & Digi-Reel®

Series TrenchFET® Gen IV

Packaging Tape & Reel (TR)

Part Status Active

FET Type N-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 30 V

Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 4.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V

Vgs (Max) +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 15 V

FET Feature -

Power Dissipation (Max) 5W (Ta), 38W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PowerPAK® SO-8

Package / Case PowerPAK® SO-8

Base Product Number SIRA12

Datasheet & Documents

HTML Datasheet

SIRA12BDP-T1-GE3-DG

DIGI Certification
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