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SIS626DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 16A PPAK1212-8
1431 Pcs New Original In Stock
N-Channel 25 V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
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5.0 / 5.0
- (190 Ratings)
SIS626DN-T1-GE3
Product Overview
12786279
DiGi Electronics Part Number
SIS626DN-T1-GE3-DGManufacturer
Vishay Siliconix
SIS626DN-T1-GE3
Description
MOSFET N-CH 25V 16A PPAK1212-8Inventory
1431 Pcs New Original In Stock
N-Channel 25 V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Quantity
Minimum 1
Minimum 1
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SIS626DN-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1925 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS626
Datasheet & Documents
HTML Datasheet
SIS626DN-T1-GE3-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Standard Package
3,000
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
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de desembre 02, 2025
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de desembre 02, 2025
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de desembre 02, 2025
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de desembre 02, 2025
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de desembre 02, 2025
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Frequently Asked Questions (FAQ)
What are the key design-in risks when using the SIS626DN-T1-GE3 in a high-current DC-DC converter operating above 10A continuous load?
When designing with the SIS626DN-T1-GE3 in high-current DC-DC applications above 10A, thermal management is a critical risk due to its 52W power dissipation limit at case temperature. Even though the Rds(on) is low at 9mΩ, PCB layout must provide sufficient copper area for heat dissipation since it's a surface-mount PowerPAK® 1212-8 package. Without adequate thermal vias and copper pour, junction temperatures may exceed 150°C, especially in enclosed or convection-limited environments. Monitor temperature during load transients and consider derating Id above 80°C ambient. Use multiple thermal vias and low-thermal-resistance connections to internal ground planes to improve reliability.
Can the SIS626DN-T1-GE3 be used with a 3.3V gate drive in synchronous buck applications, and how does it compare to SISH112DN-T1-GE3 for low-voltage drive compatibility?
Yes, the SIS626DN-T1-GE3 can be driven with a 3.3V logic signal since its Rds(on) is specified at 2.5V and Vgs(th) max is 1.4V, ensuring full enhancement. However, at 3.3V Vgs, actual Rds(on) will be higher than the 9mΩ @ 10V spec—expect 12–15mΩ depending on temperature. Compared to the SISH112DN-T1-GE3, which has a lower gate threshold and optimized 2.5V performance, the SIS626DN-T1-GE3 may exhibit higher conduction losses under identical low-voltage drive conditions. Use SISH112DN-T1-GE3 if minimizing losses at ≤3.3V is critical; otherwise, ensure strong gate drivers and thermal margin with the SIS626DN-T1-GE3.
What are the reliability concerns when replacing an aging IRF7468PbF with the SIS626DN-T1-GE3 in an existing power stage design?
Replacing the IRF7468PbF with the SIS626DN-T1-GE3 poses compatibility risks despite similar specs: the SIS626DN-T1-GE3 has higher gate charge (60nC vs ~32nC) and input capacitance (1925pF vs ~1000pF), which increases switching losses and driver load. Ensure your gate driver can source/sink sufficient current to charge/discharge the gate quickly, especially at high-frequency operation (>300kHz). Also, the PowerPAK® 1212-8 footprint differs from D-Pak or PowerPAK® 8x8, requiring PCB re-layout. Validate thermal performance as the thermal pad design differs, and avoid overstressing the ±12V Vgs limit due to ringing risks.
How should I mitigate gate oscillation risks in parallel configurations when using multiple SIS626DN-T1-GE3 MOSFETs in a current-sharing design?
Parallel use of SIS626DN-T1-GE3 MOSFETs introduces gate oscillation risks due to the high input capacitance (1925pF) and PCB inductance. To mitigate this, use individual gate resistors (4.7Ω–10Ω) for each device to dampen ringing, keep gate loops as short as possible, and avoid shared gate drive traces. Include Kelvin-source connections if available, and ensure symmetrical layout to balance current sharing. Poor layout can lead to thermal runaway in one device due to mismatched turn-on times. Also verify that total gate charge doesn’t overload the driver’s peak current capability during switching transitions.
Is the SIS626DN-T1-GE3 suitable for automotive load switching applications, and what are the long-term reliability concerns given its obsolete status?
While the SIS626DN-T1-GE3 meets automotive temperature requirements (-55°C to 150°C) and has robust Rds(on) performance for 25V load switching, its obsolete status poses significant long-term reliability and supply chain risks. Continued use in new designs is discouraged for production vehicles due to lack of future availability and potential end-of-life obsolescence in existing systems. For existing designs, maintain rigorous sourcing controls and consider redesigning with active-pin-compatible alternatives like SISH112DN-T1-GE3. Monitor for counterfeit parts in the supply chain, especially given the 'New Original In Stock' label on limited inventory.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SIS626DN-T1-GE3 CAD Models
Vishay Siliconix SIS626DN-T1-GE3 PCB symbols & footprints
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