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SIS184DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 17.4A/65.3A PPAK
1480 Pcs New Original In Stock
N-Channel 60 V 17.4A (Ta), 65.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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5.0 / 5.0
- (186 Ratings)
SIS184DN-T1-GE3
Product Overview
12786679
DiGi Electronics Part Number
SIS184DN-T1-GE3-DGManufacturer
Vishay Siliconix
SIS184DN-T1-GE3
Description
MOSFET N-CH 60V 17.4A/65.3A PPAKInventory
1480 Pcs New Original In Stock
N-Channel 60 V 17.4A (Ta), 65.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Quantity
Minimum 1
Minimum 1
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SIS184DN-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
17.4A (Ta), 65.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1490 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS184
Datasheet & Documents
HTML Datasheet
SIS184DN-T1-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SIS184DN-T1-GE3DKR
SIS184DN-T1-GE3CT
SIS184DN-T1-GE3TR
SIS184DN-GE3
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
Livraison rapide et fiable. La durabilité des produits m’a permis de les utiliser sans souci pendant longtemps.
de desembre 02, 2025
Die Verpackung macht einen hochwertigen Eindruck und gewährleistet maximalen Schutz während des Transports. Sehr zufrieden.
de desembre 02, 2025
Excellent value for affordable tech solutions.
de desembre 02, 2025
I appreciated the quick response from the site, especially during peak hours.
de desembre 02, 2025
Their commitment to punctual logistics and high-quality packaging is admirable.
de desembre 02, 2025
DiGi Electronics provides excellent packaging safety measures, ensuring that even fragile parts arrive undamaged, all at competitive prices.
de desembre 02, 2025
DiGi Electronics provides comprehensive order tracking, keeping me informed throughout.
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Frequently Asked Questions (FAQ)
Can the SIS184DN-T1-GE3 safely replace an Infineon BSC093N04LS6 in a 48V DC-DC buck converter without redesigning the gate drive circuit?
The SIS184DN-T1-GE3 can be considered as a drop-in replacement for the Infineon BSC093N04LS6 in terms of voltage rating (60V vs. 40V) and current capability, but caution is required due to differences in gate charge (Qg = 32 nC @ 10V for SIS184DN vs. ~28 nC for BSC093N04LS6) and threshold voltage (Vgs(th) max 3.4V vs. ~2.5V). While both are logic-level compatible, the higher Qg of the SIS184DN-T1-GE3 may increase switching losses and require verification of gate driver current capability—especially at high frequencies (>200 kHz). Always validate thermal performance and transient response under full load before finalizing the substitution.
What are the thermal risks when using the SIS184DN-T1-GE3 in a compact PCB layout without a dedicated thermal pad or via array under the PowerPAK® 1212-8 package?
The SIS184DN-T1-GE3 relies heavily on PCB copper for heat dissipation, especially since its RθJA is highly dependent on layout. Without a proper thermal pad and via stitching to inner ground planes, the junction temperature can exceed safe limits even at moderate currents (e.g., >10A continuous), leading to thermal runaway or premature failure. For reliable operation above 10A, implement a 2-layer or 4-layer board with at least 2 oz copper, a solid thermal pad connected to drain potential (if isolated), and multiple thermal vias (≥9 vias of 0.3mm diameter) to transfer heat to backside copper. Failure to do so may reduce effective power handling by over 50% compared to datasheet Tc ratings.
Is the SIS184DN-T1-GE3 suitable for high-frequency (>500 kHz) synchronous rectification in a telecom power supply, given its input capacitance and gate charge characteristics?
While the SIS184DN-T1-GE3 has low Rds(on) (5.8 mΩ @ 10V), its relatively high input capacitance (Ciss = 1490 pF @ 30V) and total gate charge (32 nC) introduce significant switching losses at frequencies above 500 kHz. In synchronous rectification applications, this can lead to excessive power dissipation and reduced efficiency unless driven by a high-current gate driver (≥2A peak). Consider instead devices optimized for high-frequency operation like the Vishay SiZF480DT (dual FET) or Infineon OptiMOS™ 5 parts, which offer lower Qg and Crss. If using the SIS184DN-T1-GE3, ensure dead-time optimization and active Miller clamping to minimize cross-conduction and ringing.
How does the avalanche energy rating of the SIS184DN-T1-GE3 compare to similar 60V MOSFETs like the ON Semiconductor NVMFS4C06N, and what implications does this have for inductive load switching?
The SIS184DN-T1-GE3 does not specify a guaranteed single-pulse avalanche energy (EAS) in its datasheet, unlike the NVMFS4C06N, which lists 45 mJ. This absence means Vishay does not guarantee robust performance during inductive clamping events—common in motor drives or relay circuits. In such applications, relying solely on the SIS184DN-T1-GE3 without external snubbers or TVS diodes increases the risk of latent damage or catastrophic failure under repetitive stress. For inductive switching, either add protection circuitry or select a MOSFET with a documented EAS rating. If cost constraints favor the SIS184DN-T1-GE3, conduct rigorous HTRB (High-Temperature Reverse Bias) and surge testing to validate field reliability.
Can the SIS184DN-T1-GE3 be used in parallel configurations to achieve higher current capacity, and what layout precautions are necessary to ensure current sharing?
Yes, the SIS184DN-T1-GE3 can be paralleled to increase current handling, but unequal current sharing due to threshold voltage variation (±0.5V typical spread) and thermal coupling can cause one device to hog current and overheat. To mitigate this, use tightly matched units from the same reel, maintain symmetrical PCB traces (equal length and width for source/drain connections), and place devices close together to promote thermal tracking. Include individual source resistors (0.1–0.5 Ω) if operating above 20A total to improve balance. Avoid relying solely on the negative temperature coefficient of Rds(on), as it only stabilizes at higher temperatures—initial turn-on imbalance can still trigger localized hot spots. Always validate with thermal imaging under worst-case load conditions.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SIS184DN-T1-GE3 CAD Models
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