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SIHB15N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 15A D2PAK
2339 Pcs New Original In Stock
N-Channel 600 V 15A (Tc) 180W (Tc) Surface Mount TO-263 (D2PAK)
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5.0 / 5.0
- (231 Ratings)
SIHB15N60E-GE3
Product Overview
12787105
DiGi Electronics Part Number
SIHB15N60E-GE3-DGManufacturer
Vishay Siliconix
SIHB15N60E-GE3
Description
MOSFET N-CH 600V 15A D2PAKInventory
2339 Pcs New Original In Stock
N-Channel 600 V 15A (Tc) 180W (Tc) Surface Mount TO-263 (D2PAK)
Quantity
Minimum 1
Minimum 1
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SIHB15N60E-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB15
Datasheet & Documents
HTML Datasheet
SIHB15N60E-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SIHB15N60EGE3
Standard Package
1,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
Tolles Einkaufserlebnis dank der schnellen Lieferung und dem freundlichen Service.
de desembre 02, 2025
DiGi Electronics' prompt shipping ensures I stay ahead in my schedule.
de desembre 02, 2025
Their website navigation is seamless, allowing us to find what we need quickly.
de desembre 02, 2025
I appreciate how friendly and knowledgeable their customer service representatives are.
de desembre 02, 2025
Reliable, prompt, and friendly service—top quality all around.
de desembre 02, 2025
The company's commitment to after-sales service truly sets them apart in the industry.
de desembre 02, 2025
The friendly and knowledgeable staff make dealing with DiGi Electronics a pleasure.
de desembre 02, 2025
Thanks to their extensive stock, we've avoided many delays and disruptions.
de desembre 02, 2025
Their products reflect a strong dedication to quality excellence.
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Frequently Asked Questions (FAQ)
When designing in the SIHB15N60E-GE3 for a 600 V flyback converter, what thermal risks should be considered at full 15A drain current and how can PCB design mitigate them?
The SIHB15N60E-GE3 can handle up to 15A continuous drain current (Tc), but this rating assumes ideal heatsinking at the case. In real-world surface-mount designs, thermal buildup in the PCB is a major risk, especially in enclosed or high-ambient-temperature environments. To mitigate this, ensure at least 2–3 square inches of 2-oz copper pour connected to the drain pad (tab) for effective conduction cooling. Use multiple thermal vias under the D2PAK footprint to transfer heat to inner or back-side ground planes. Without proper thermal management, junction temperatures can exceed 150°C even below 10A average current, triggering thermal shutdown or long-term reliability degradation. Monitor temperature via IR imaging during prototyping to validate layout effectiveness.
Can the SIHB15N60E-GE3 replace the IRFGB40N60F in an existing PFC circuit without gate driver adjustments, and what are the key trade-offs?
The SIHB15N60E-GE3 can replace the IRFGB40N60F in many 600 V PFC applications, but with important trade-offs. While both are N-channel 600 V MOSFETs in TO-263 packages, the SIHB15N60E-GE3 has higher Rds(on) (280 mΩ vs. ~150 mΩ) but significantly lower gate charge (78 nC vs. ~110 nC), enabling faster switching and lower dynamic losses. However, the gate threshold voltage of the SIHB15N60E-GE3 is still compatible (4V max), so the same 10–12 V gate driver can be used. The main risk is higher conduction loss at high load—verify thermal performance under peak current conditions. Consider this replacement most suitable when improving light-load efficiency and switching losses is more critical than minimizing full-load heat generation.
What are the risks of using the SIHB15N60E-GE3 near its ±30V gate-source voltage limit in industrial motor drives with noisy control lines?
Operating the SIHB15N60E-GE3 near its ±30V Vgs(max) rating introduces significant risk in noisy industrial environments where voltage transients on the gate can exceed safe limits, leading to gate oxide degradation or failure. Even if the driver outputs 15 V nom, inductive coupling or poor PCB layout can induce spikes exceeding ±30 V. To protect the SIHB15N60E-GE3, always include a low-impedance path to ground via a gate-to-source Zener diode (e.g., 18 V TVS) and a series gate resistor (10–22 Ω) to damp ringing. Also, keep gate traces short and avoid routing near high dI/dt paths. Long-term reliability declines rapidly with repeated overvoltage events, even if they don’t cause immediate failure.
How does the 1350 pF input capacitance (Ciss) of the SIHB15N60E-GE3 impact gate driver selection in high-frequency SMPS designs above 75 kHz?
The SIHB15N60E-GE3's 1350 pF Ciss at 100 V influences gate driver power consumption and switching speed, especially above 75 kHz. At 100 kHz, the driver must source/sink approximately 78 nC per cycle, requiring an average current of ~7.8 mA per MHz of operation per volt swing—exceeding 7 mA continuous current at 100 kHz with 10 V drive. Select gate drivers with peak current ≥1 A (e.g., TC4420 or UCC27324) to minimize rise/fall times and avoid cross-conduction in half-bridge layouts. Higher Ciss also increases turn-on delay, requiring dead-time adjustments. Poor driver selection can lead to excessive switching losses and overheating of both the driver and SIHB15N60E-GE3. Always simulate turn-on energy using the Qg curve from the datasheet for your specific bus voltage.
Is the SIHB15N60E-GE3 suitable for use in parallel configurations in high-current AC-DC power supplies, and what are the stability risks?
The SIHB15N60E-GE3 can be paralleled in high-current designs, but careful attention to thermal and electrical imbalance is required. Its positive temperature coefficient for Rds(on) supports current sharing, but mismatched PCB thermal paths or gate loop inductances can cause one device to hog current. To safely parallel SIHB15N60E-GE3 MOSFETs, ensure symmetrical layout with matched gate drive traces, individual gate resistors (5–10 Ω), and separate Kelvin source connections if available. Mount devices on a common thermal plane to equalize temperatures. Avoid paralleling with different batch or aged units, as threshold voltage variance (up to 4 V max) may shift bias points. Always derate total current by at least 20% and verify sharing under transient load steps using current probes.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SIHB15N60E-GE3 CAD Models
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