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IRFP450PBF
Vishay Siliconix
MOSFET N-CH 500V 14A TO247-3
17173 Pcs New Original In Stock
N-Channel 500 V 14A (Tc) 190W (Tc) Through Hole TO-247AC
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5.0 / 5.0
- (305 Ratings)
IRFP450PBF
Product Overview
12914682
DiGi Electronics Part Number
IRFP450PBF-DGManufacturer
Vishay Siliconix
IRFP450PBF
Description
MOSFET N-CH 500V 14A TO247-3Inventory
17173 Pcs New Original In Stock
N-Channel 500 V 14A (Tc) 190W (Tc) Through Hole TO-247AC
Quantity
Minimum 1
Minimum 1
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IRFP450PBF Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
IRFP450
Datasheet & Documents
HTML Datasheet
IRFP450PBF-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
*IRFP450PBF
Standard Package
25
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
寄貨速度超出預期，幾乎是當天出貨，第二天就收到商品，效率令人讚賞！
de desembre 02, 2025
Le suivi en ligne est très précis, ce qui m’a permis de suivre ma commande en temps réel avec simplicité.
de desembre 02, 2025
デザインがシンプルで見やすく、快適なショッピング体験を提供してくれます。
de desembre 02, 2025
Their attention to shipping detail minimizes our worries about damages or delays.
de desembre 02, 2025
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de desembre 02, 2025
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Frequently Asked Questions (FAQ)
Can the IRFP450PBF be safely used as a drop-in replacement for the IRFP460PBF in a 400V DC bus motor drive application without redesigning the gate drive circuit?
No, the IRFP450PBF is not a direct electrical replacement for the IRFP460PBF in high-frequency or high-efficiency motor drives due to differences in gate charge and switching characteristics. While both are 500V N-channel MOSFETs in TO-247 packages, the IRFP460PBF has a lower total gate charge (Qg ≈ 135 nC) compared to the IRFP450PBF’s 150 nC at 10V Vgs, enabling faster switching with the same gate driver. Using the IRFP450PBF may result in increased switching losses, higher junction temperatures, and potential instability if the existing gate driver is optimized for the lower Qg of the IRFP460PBF. Always verify gate drive current capability and consider adding a gate resistor to control dv/dt and prevent oscillations.
What thermal management risks should I consider when operating the IRFP450PBF near its 190W power dissipation limit in a poorly ventilated industrial enclosure?
Operating the IRFP450PBF near its 190W (Tc) rating without adequate heatsinking and airflow poses significant thermal runaway and reliability risks. The specified power dissipation assumes a case temperature (Tc) of 25°C, which is rarely achievable in enclosed systems. In practice, you must derate power based on actual heatsink thermal resistance and ambient temperature. For example, with a typical RθJC of 0.62°C/W and a heatsink of RθSA = 1.0°C/W, total RθJA ≈ 1.62°C/W. At 190W, this would cause a temperature rise of ~308°C—far exceeding the 150°C TJ(max). Use forced airflow, monitor case temperature, and implement thermal shutdown protection to avoid premature failure.
Is the IRFP450PBF suitable for use in a 480VAC line-frequency rectifier-fed DC link inverter, and how does its 500V Vdss rating impact long-term reliability under surge conditions?
The IRFP450PBF’s 500V Vdss rating is marginal for 480VAC rectified applications, where peak DC bus voltage reaches ~678V (480 × √2). Continuous operation near or above 450V leaves minimal margin for voltage transients from inductive loads or line surges, increasing the risk of avalanche breakdown. While the device supports limited unclamped inductive switching (UIS), repeated stress can degrade the oxide layer. For reliable operation, use the IRFP450PBF only with robust snubber circuits, TVS diodes, or active clamping, and consider a higher-voltage alternative like the IXFH20N50P3 (500V, better SOA) or STW14NK50Z if surge immunity is critical.
How does the IRFP450PBF compare to the IXTH24N50L in terms of conduction loss and thermal performance in a 10A continuous load switching application at 100kHz?
In a 10A, 100kHz application, the IXTH24N50L generally outperforms the IRFP450PBF due to its lower Rds(on) (typically 200mΩ vs. 400mΩ at 10V Vgs), resulting in half the conduction loss (Pcond = I²R = 2W vs. 4W). Additionally, the IXTH24N50L is optimized for higher-frequency operation with lower gate charge (~110 nC), reducing switching losses. The IRFP450PBF, while robust, suffers from higher switching losses at 100kHz due to its 150 nC Qg and slower intrinsic diodes. If your design prioritizes efficiency and thermal performance at high frequency, the IXTH24N50L is a superior choice; however, the IRFP450PBF may still be acceptable in lower-frequency or cost-sensitive designs with sufficient heatsinking.
Can I parallel multiple IRFP450PBF devices to increase current handling in a high-power SMPS, and what layout precautions are necessary to ensure current sharing?
Yes, you can parallel IRFP450PBF devices to increase current capacity, but careful layout and biasing are essential to avoid thermal and dynamic current imbalance. Due to the positive temperature coefficient of Rds(on), the IRFP450PBF exhibits some natural current sharing at high temperatures, but mismatched gate delays and parasitic inductances can cause uneven switching. To mitigate this, use individual gate resistors (1–10Ω) for each device, ensure symmetrical PCB traces for gate and source connections, and mount all devices on a common, flat heatsink with thermal paste for uniform cooling. Avoid sharing a single gate driver output without isolation, and consider using a dedicated MOSFET driver with matched propagation delays to minimize turn-on/turn-off skew.
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IRFP450PBF CAD Models
Vishay Siliconix IRFP450PBF PCB symbols & footprints
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