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BPW85B
Vishay Semiconductor Opto Division
PHOTOTRANSISTOR 450 TO 1080 NM
1983 Pcs New Original In Stock
Phototransistors 850nm Top View Radial
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Minimum 1
5.0 / 5.0
- (340 Ratings)
BPW85B
Product Overview
1160407
DiGi Electronics Part Number
BPW85B-DGManufacturer
Vishay Semiconductor Opto Division
BPW85B
Description
PHOTOTRANSISTOR 450 TO 1080 NMInventory
1983 Pcs New Original In Stock
Phototransistors 850nm Top View Radial
Quantity
Minimum 1
Minimum 1
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BPW85B Technical Specifications
Category
Optical Sensors, Phototransistors
Packaging
Bulk
Series
-
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
70 V
Current - Collector (Ic) (Max)
100 mA
Current - Dark (Id) (Max)
200 nA
Wavelength
850nm
Viewing Angle
50°
Power - Max
100 mW
Mounting Type
Through Hole
Orientation
Top View
Operating Temperature
-40°C ~ 100°C
Package / Case
Radial
Base Product Number
BPW85
Datasheet & Documents
Datasheets
Download BPW85B Product Specification (PDF)
HTML Datasheet
BPW85B-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.49.7080
Additional Information
Standard Package
5,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
產品非常耐用，日常使用中幾乎沒有任何磨損，品質值得信賴。
de desembre 02, 2025
DiGi Electronics’ fast shipping made my purchase seamless, and their products have lasted through rough handling.
de desembre 02, 2025
DiGi Electronics sets a high standard for sustainable packaging in the industry.
de desembre 02, 2025
Their after-sales response times are very fast. I always get helpful guidance shortly after reaching out.
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Frequently Asked Questions (FAQ)
Can the BPW85B phototransistor be reliably used as a drop-in replacement for the Everlight PT334-6C in an infrared object detection circuit operating at 850nm, and what design adjustments might be needed?
While the BPW85B and Everlight PT334-6C both operate at 850nm and share similar radial through-hole packages, they differ in key performance characteristics that affect compatibility. The BPW85B has a higher collector-emitter breakdown voltage (70V vs. 30V) and lower dark current (200nA vs. 100nA typical), making it more robust in high-voltage or low-noise applications. However, the BPW85B’s viewing angle (50°) is narrower than the PT334-6C’s (~60°), which may reduce detection range in wide-angle sensing setups. Additionally, the BPW85B’s rise/fall times are slower, potentially impacting response in high-speed switching. If replacing, verify that the existing bias resistor and load circuitry can accommodate the BPW85B’s higher gain and slower transient response—adjust pull-up resistors or add a small-speed-up capacitor if timing margins are tight. Always validate under real-world ambient light conditions due to differing spectral sensitivity curves.
What are the critical reliability risks when using the BPW85B in outdoor industrial environments with temperature swings from -30°C to 95°C and exposure to humidity, despite its -40°C to 100°C operating range?
Although the BPW85B is rated for -40°C to 100°C and has MSL 1 (unlimited floor life), long-term outdoor use introduces non-obvious failure modes. Condensation during thermal cycling can cause microcracks in the epoxy lens or lead to moisture ingress at the lead-frame interface, degrading optical coupling efficiency over time. UV exposure may yellow the plastic package, reducing 850nm transmission by up to 15% after 2–3 years. To mitigate, encapsulate the device in conformal coating (e.g., silicone or parylene) and avoid direct sunlight exposure. Also, ensure PCB layout minimizes thermal stress on leads—use strain relief and avoid sharp bends. Monitor dark current drift during cold starts (<0°C), as leakage can increase temporarily, affecting threshold detection in precision applications.
How does the BPW85B compare to the Osram SFH 309 FA in terms of signal integrity and noise performance in a high-EMI factory automation environment with nearby motor drives and switching power supplies?
The BPW85B offers superior noise immunity compared to the Osram SFH 309 FA due to its lower dark current (200nA vs. 500nA max) and better shielding from internal construction, making it less susceptible to false triggering from electromagnetic interference. However, the SFH 309 FA has a faster response time (~3µs vs. ~10µs for BPW85B), which may be preferable in high-speed encoder applications. In high-EMI settings, the BPW85B’s slower response can actually act as a low-pass filter, reducing susceptibility to RF noise spikes. For optimal performance, pair the BPW85B with a shielded IR LED (e.g., Vishay TSAL6200) and use a differential amplifier stage with hysteresis to reject common-mode noise. Avoid long unshielded traces between sensor and amplifier—keep under 10cm and route perpendicular to high-current paths.
Is it safe to drive the BPW85B continuously at 90 mA collector current in a pulsed IR communication system with 50% duty cycle, given its 100 mA absolute maximum rating?
Operating the BPW85B at 90 mA with 50% duty cycle approaches unsafe thermal limits despite being below the 100 mA absolute max. At this current, power dissipation reaches ~90 mW (assuming Vce(sat) ≈ 1V), nearing the 100 mW max rating, especially if ambient temperature exceeds 50°C. Prolonged operation risks thermal runaway due to positive temperature coefficient of current gain. Instead, limit peak current to ≤70 mA and ensure adequate PCB copper pour under the device for heat sinking. Use a series resistor to limit inrush during turn-on, and consider derating further if enclosure airflow is restricted. For pulsed systems, maintain off-time ≥10µs to allow junction cooling. Monitor case temperature; if it exceeds 85°C during operation, reduce duty cycle or current to prevent long-term degradation of the semiconductor junction.
What layout and grounding practices should be followed when integrating the BPW85B into a mixed-signal PCB with analog front-end circuitry to avoid false triggering from digital noise?
To prevent digital noise coupling into the BPW85B’s high-gain output, isolate its ground return path from digital grounds using a star ground configuration tied at the ADC reference point. Route the BPW85B’s output trace away from clock lines, switching regulators, and microcontroller I/Os—maintain ≥5mm clearance. Use a ground plane beneath the sensor but avoid splitting it; instead, place a 100nF ceramic decoupling capacitor between Vcc and ground as close as possible to the load resistor. Add a small RC low-pass filter (e.g., 1kΩ + 100pF) at the amplifier input to suppress RF interference above 1MHz. If using a comparator for threshold detection, include hysteresis (5–10% of signal swing) to prevent oscillation from noise. Finally, shield the sensor area with a grounded copper pour on the solder side, leaving the lens aperture unobstructed, to reduce capacitive coupling from nearby traces.
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BPW85B CAD Models
Vishay Semiconductor Opto Division BPW85B PCB symbols & footprints
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