SM6S17AHE3_A/I >
SM6S17AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 17VWM 27.6VC DO218AB
4437 Pcs New Original In Stock
27.6V Clamp 167A Ipp Tvs Diode Surface Mount DO-218AB
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SM6S17AHE3_A/I Vishay General Semiconductor - Diodes Division
5.0 / 5.0 - (95 Ratings)

SM6S17AHE3_A/I

Product Overview

1024516

DiGi Electronics Part Number

SM6S17AHE3_A/I-DG
SM6S17AHE3_A/I

Description

TVS DIODE 17VWM 27.6VC DO218AB

Inventory

4437 Pcs New Original In Stock
27.6V Clamp 167A Ipp Tvs Diode Surface Mount DO-218AB
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Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 2.3062 2.3062
  • 200 0.8929 178.5800
  • 750 0.8616 646.2000
  • 1500 0.8460 1269.0000
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SM6S17AHE3_A/I Technical Specifications

Category Transient Voltage Suppressors (TVS), TVS Diodes

Packaging Tape & Reel (TR)

Series PAR®

Product Status Active

Type Zener

Unidirectional Channels 1

Voltage - Reverse Standoff (Typ) 17V

Voltage - Breakdown (Min) 18.9V

Voltage - Clamping (Max) @ Ipp 27.6V

Current - Peak Pulse (10/1000µs) 167A

Power - Peak Pulse 4600W (4.6kW)

Power Line Protection No

Applications -

Capacitance @ Frequency -

Operating Temperature -55°C ~ 175°C (TJ)

Grade Automotive

Qualification AEC-Q101

Mounting Type Surface Mount

Package / Case DO-218AB

Supplier Device Package DO-218AB

Base Product Number SM6S17

Datasheet & Documents

HTML Datasheet

SM6S17AHE3_A/I-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080

Additional Information

Standard Package
750

Alternative Parts

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
SM6S17AHE3/2D
Vishay General Semiconductor - Diodes Division
12169
SM6S17AHE3/2D-DG
0.8460
Direct
SM6S17HE3/2D
Vishay General Semiconductor - Diodes Division
1153
SM6S17HE3/2D-DG
0.8460
Direct

Reviews

5.0/5.0-(Show up to 5 Ratings)
Everl***ingEve
de desembre 02, 2025
5.0
We trust DiGi Electronics for their exceptional after-sales assistance.
Brigh***rizons
de desembre 02, 2025
5.0
The quality assurance process they follow guarantees satisfaction with each product.
Inn***ire
de desembre 02, 2025
5.0
Their transparent pricing policy sets them apart from other retailers.
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Frequently Asked Questions (FAQ)

Can the SM6S17AHE3_A/I TVS diode safely replace a Littelfuse SMBJ17A in an automotive 12V power rail protection circuit, and what are the key reliability trade-offs to consider?

Yes, the SM6S17AHE3_A/I can be used as a drop-in replacement for the Littelfuse SMBJ17A in many 12V automotive applications due to its compatible DO-218AB (SMB) footprint, similar 17V reverse standoff voltage, and AEC-Q101 qualification. However, the SM6S17AHE3_A/I offers a higher peak pulse power rating (4.6kW vs. 4kW) and lower clamping voltage (27.6V vs. 29.2V at 167A), providing better surge protection margin. The trade-off is that the Vishay device has a slightly higher minimum breakdown voltage (18.9V vs. 18.8V), which may marginally reduce headroom in tight tolerance designs. Always validate under actual load dump or ISO 7637-2 test conditions to ensure system-level compliance.

What design risks should I evaluate when using the SM6S17AHE3_A/I for load dump protection in a 12V automotive system, especially regarding thermal management and PCB layout?

The primary risk with the SM6S17AHE3_A/I in load dump scenarios is localized thermal stress during high-energy transients. Although rated for 4.6kW peak power, this is a short-duration (10/1000µs) specification—repeated or prolonged surges can cause junction temperatures to exceed safe limits if heat isn’t properly sunk. Use a low-impedance ground plane directly under the DO-218AB pad and ensure adequate copper pour (≥2 in² recommended) to act as a heatsink. Avoid placing sensitive traces near the TVS; maintain ≥5mm clearance to prevent secondary arcing. Also, verify that upstream fusing or current-limiting circuitry prevents cumulative energy exposure beyond the diode’s I²t rating.

How does the SM6S17AHE3_A/I compare to the STMicroelectronics SMAJ17A in terms of capacitance and high-frequency noise suppression, and is it suitable for protecting CAN or LIN bus lines?

Unlike the SMAJ17A, the SM6S17AHE3_A/I does not specify capacitance in its datasheet, which is a red flag for high-speed communication lines like CAN or LIN. While both are unidirectional TVS diodes with similar clamping performance, the unspecified capacitance of the SM6S17AHE3_A/I introduces uncertainty in signal integrity—especially above 1 Mbps. For CAN bus protection, prefer low-capacitance alternatives such as the Vishay SMBJ17A-C or Littelfuse SP3022 series (<10pF). If you must use the SM6S17AHE3_A/I, conduct TDR or eye-diagram testing to confirm it doesn’t distort signal edges or cause excessive jitter.

Is the SM6S17AHE3_A/I appropriate for protecting against ISO 16750-2 load dump pulses, and what derating guidelines should I follow given its -55°C to 175°C operating range?

Yes, the SM6S17AHE3_A/I is well-suited for ISO 16750-2 load dump protection (Pulse 5a: 87V, 400ms), thanks to its 4.6kW peak power capability and automotive-grade AEC-Q101 qualification. However, derating is critical: at 125°C ambient, reduce allowable peak pulse power by ~40% compared to 25°C ratings. Never operate near the 175°C TJ(max) during transient events—keep peak junction temperature below 150°C for long-term reliability. Use thermal simulation or empirical testing under worst-case ambient (e.g., under-hood at 105°C) to confirm margin. Pair with a series PTC or fuse to limit energy during sustained overvoltage conditions.

What are the key integration challenges when designing the SM6S17AHE3_A/I into a compact PCB layout with mixed-signal components, and how can I mitigate EMI risks during fast transients?

The main integration challenge with the SM6S17AHE3_A/I in dense layouts is managing high di/dt transients that can couple noise into adjacent analog or digital circuits via parasitic inductance. Keep the TVS as close as possible to the protected connector or input node—trace length should be <10mm—and use a solid ground return path directly beneath the device. Avoid routing high-impedance signals (e.g., sensor inputs) parallel to TVS traces. During fast ESD or switching transients, the 167A peak current can induce ground bounce; mitigate this with a local 100nF ceramic capacitor placed between the protected line and ground, within 5mm of the SM6S17AHE3_A/I. Always perform conducted immunity testing (e.g., ISO 11452-4) to validate system robustness.

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