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TPHR6503PL1,LQ
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=210W F=1MHZ
68029 Pcs New Original In Stock
N-Channel 30 V 150A (Tc) 960mW (Ta), 210W (Tc) Surface Mount 8-SOP Advance (5x5.75)
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5.0 / 5.0
- (37 Ratings)
TPHR6503PL1,LQ
Product Overview
12994845
DiGi Electronics Part Number
TPHR6503PL1,LQ-DGManufacturer
Toshiba Semiconductor and Storage
TPHR6503PL1,LQ
Description
UMOS9 SOP-ADV(N) PD=210W F=1MHZInventory
68029 Pcs New Original In Stock
N-Channel 30 V 150A (Tc) 960mW (Ta), 210W (Tc) Surface Mount 8-SOP Advance (5x5.75)
Quantity
Minimum 1
Minimum 1
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TPHR6503PL1,LQ Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Cut Tape (CT) & Digi-Reel®
Series
U-MOSIX-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.65mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
960mW (Ta), 210W (Tc)
Operating Temperature
175°C
Mounting Type
Surface Mount
Supplier Device Package
8-SOP Advance (5x5.75)
Package / Case
8-PowerTDFN
Datasheet & Documents
HTML Datasheet
TPHR6503PL1,LQ-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
264-TPHR6503PL1LQDKR
264-TPHR6503PL1LQCT
TPHR6503PL1,LQ(M
264-TPHR6503PL1LQTR
Standard Package
5,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
신속한 배송과 친절한 애프터서비스 덕분에 자주 구매하게 됩니다. 항상 신뢰하고 있습니다.
de desembre 02, 2025
대량 구매 시 가격 혜택이 크고, 요청사항에 신속하게 대응해줘서 만족스럽습니다.
de desembre 02, 2025
전 제품이 가격이 공개되어 있어서 구매 결정 시 편리했고, 제품도 만족스럽습니다.
de desembre 02, 2025
配送が迅速で、サポートも丁寧でした。とても満足です。
de desembre 02, 2025
The detailed logistics tracking updates from DiGi Electronics make it easy to monitor shipment progress.
de desembre 02, 2025
Every time I order from DiGi Electronics, the items arrive well-packaged and exactly as described, which saves me time.
de desembre 02, 2025
Their post-sale responses are detailed and always delivered within a short time frame.
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Frequently Asked Questions (FAQ)
How does the TPHR6503PL1,LQ compare to the Infineon IPD060N03L G when designing a high-current DC-DC converter for a 30V automotive application, and what are the key trade-offs in thermal performance and switching losses?
When selecting between the TPHR6503PL1,LQ and the Infineon IPD060N03L G for a 30V automotive DC-DC converter, the TPHR6503PL1,LQ offers significantly lower Rds(on) at 0.65mΩ (vs. 0.6mΩ for IPD060N03L), but with a higher gate charge (110nC vs. 60nC). This means the TPHR6503PL1,LQ delivers better conduction efficiency at 150A loads but requires a more robust gate driver due to higher switching losses at 1MHz. The TPHR6503PL1,LQ’s UMOS9 technology provides superior thermal stability up to 175°C junction temperature, making it more suitable for under-hood environments, though its 8-SOP Advance package demands careful PCB layout for optimal heat spreading compared to the DPAK used in the IPD060N03L. Use the TPHR6503PL1,LQ when minimizing conduction losses is critical and thermal vias with a solid ground plane are feasible.
What are the critical layout considerations when using the TPHR6503PL1,LQ in a high-frequency (1MHz) buck converter to avoid parasitic oscillation and ensure reliable switching?
To prevent parasitic oscillation and ensure clean switching in a 1MHz buck converter using the TPHR6503PL1,LQ, minimize loop inductance by placing the input capacitor within 5mm of the drain and source pads, using wide, short traces. The 8-SOP Advance package has an exposed thermal pad that must be soldered directly to a multi-layer PCB with at least 4 thermal vias per pad to maintain junction-to-case thermal resistance. Gate drive traces should be routed away from high di/dt paths and shielded if possible, as the 10,000 pF input capacitance makes the device sensitive to noise. A low-inductance gate resistor (1–5Ω) placed close to the gate pin helps dampen ringing. Failure to follow these practices may result in voltage overshoot, false turn-on, or premature device failure under high-frequency operation.
Can the TPHR6503PL1,LQ be used as a drop-in replacement for the ON Semiconductor NTMFS5C604NL in a server power supply, and what design modifications are necessary?
The TPHR6503PL1,LQ is not a direct drop-in replacement for the NTMFS5C604NL due to differences in package and electrical characteristics. While both are 30V N-channel MOSFETs, the TPHR6503PL1,LQ uses the 8-SOP Advance (5x5.75mm) package versus the DFN5x6 used by the NTMFS5C604NL, requiring PCB footprint changes. Electrically, the TPHR6503PL1,LQ has lower Rds(on) (0.65mΩ vs. 0.75mΩ) but higher Qg (110nC vs. 78nC), which increases switching losses at high frequency. To adapt, redesign the gate drive circuit to handle higher charge requirements and ensure thermal vias are optimized for the smaller thermal pad. Additionally, verify creepage and clearance distances, as the pinout differs slightly. With proper layout adjustments, the TPHR6503PL1,LQ can offer improved conduction efficiency in high-current server applications.
What reliability risks should be considered when operating the TPHR6503PL1,LQ near its 150A continuous drain current rating in a compact industrial motor drive?
Operating the TPHR6503PL1,LQ at or near its 150A continuous rating in a compact motor drive introduces significant thermal and mechanical reliability risks. The 210W power dissipation (at Tc) assumes ideal heatsinking; in practice, without forced airflow or a large copper pour, junction temperatures can exceed 175°C under sustained load, accelerating electromigration and reducing lifespan. The 8-SOP Advance package, while compact, has limited thermal mass—relying heavily on PCB conduction. Use thermal imaging during validation to detect hotspots, and consider derating to 120A continuous in enclosed environments. Additionally, repeated thermal cycling may cause solder joint fatigue; ensure voiding under the thermal pad is <25% and use SAC305 or higher-reliability solder. Monitor Vgs(th) drift over time, as high-temperature operation can shift threshold voltage and affect turn-on consistency.
How does the gate threshold voltage behavior of the TPHR6503PL1,LQ impact low-voltage (4.5V) drive applications, and what precautions are needed to ensure full enhancement?
The TPHR6503PL1,LQ has a maximum Vgs(th) of 2.1V at 1mA, which allows it to begin turning on at low gate voltages, but full enhancement (Rds(on) = 0.65mΩ) requires 10V Vgs. When driven at 4.5V, the device operates in the linear region with significantly higher Rds(on), potentially 2–3× the rated value, leading to excessive conduction losses and thermal runaway in high-current applications. To safely use the TPHR6503PL1,LQ with 4.5V logic, implement a charge pump or bootstrap gate driver to boost Vgs above 8V, or select a logic-level MOSFET instead. If 4.5V drive is mandatory, conduct worst-case thermal simulations at elevated temperatures, as Vgs(th) decreases with temperature, increasing the risk of unintended turn-on during shutdown. Always validate switching performance across the full operating temperature range.
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TPHR6503PL1,LQ CAD Models
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