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TK160F10N1L,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 160A TO220SM
1000416 Pcs New Original In Stock
N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
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5.0 / 5.0
- (245 Ratings)
TK160F10N1L,LQ
Product Overview
12891217
DiGi Electronics Part Number
TK160F10N1L,LQ-DGManufacturer
Toshiba Semiconductor and Storage
TK160F10N1L,LQ
Description
MOSFET N-CH 100V 160A TO220SMInventory
1000416 Pcs New Original In Stock
N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
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Quality Assurance
365 - Day Quality Guarantee - Every part fully backed.
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TK160F10N1L,LQ Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Cut Tape (CT) & Digi-Reel®
Series
U-MOSVIII-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10100 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
175°C
Mounting Type
Surface Mount
Supplier Device Package
TO-220SM(W)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
TK160F10
Datasheet & Documents
HTML Datasheet
TK160F10N1L,LQ-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
264-TK160F10N1L,LQDKR-DG
264-TK160F10N1L,LQCT-DG
264-TK160F10N1LLQCT
264-TK160F10N1LLQTR
264-TK160F10N1LLQDKR
264-TK160F10N1L,LQCT
TK160F10N1LLQ
264-TK160F10N1L,LQDKR
TK160F10N1LLQ-DG
Standard Package
1,000
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
TK160F10N1L,LXGQ
Toshiba Semiconductor and Storage
2188
TK160F10N1L,LXGQ-DG
0.8556
Parametric Equivalent
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
迅速な配送と丁寧な梱包に感心しました。安心して取引できます。
de desembre 02, 2025
Their after-sales team is knowledgeable, friendly, and always ready to assist with any questions.
de desembre 02, 2025
The staff at DiGi Electronics are incredibly welcoming and eager to assist.
de desembre 02, 2025
DiGi Electronics consistently delivers reliable products that I can trust for my business needs.
de desembre 02, 2025
The packing was minimal yet effective, emphasizing sustainability.
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Frequently Asked Questions (FAQ)
What are the thermal design challenges when using the TK160F10N1L,LQ in a surface-mount high-current application with limited PCB copper area?
The TK160F10N1L,LQ can dissipate up to 375W at the case, but its surface-mount TO-220SM(W) package relies heavily on proper PCB thermal management for heat dissipation. In high-current applications, insufficient copper pour or lack of thermal vias under the drain pad can lead to rapid junction temperature rise, exceeding the 175°C max rating. To mitigate this, design with at least 2oz copper, use a multi-layer board with thermal vias connected to internal ground planes, and ensure ≥5 cm² copper area connected to the drain pad. Real-world performance under continuous 80A+ loads may require derating above 75°C ambient without aggressive cooling.
Can the TK160F10N1L,LQ reliably replace IXYS IXTH160N10L in a 100V motor drive inverter, and what gate drive considerations should I verify?
The TK160F10N1L,LQ is a viable surface-mount upgrade over the through-hole IXTH160N10L in 100V inverter designs, offering similar 160A current rating and 100V Vdss. However, the TK160F10N1L,LQ has a lower gate charge (122 nC vs. ~180 nC), which improves switching speed but increases risk of shoot-through or voltage overshoot if gate drive strength isn't matched. Use a gate driver with at least 2A sink/source capability and consider adding a small gate resistor (5–10Ω) to dampen ringing. Also verify thermal interface since TO-220SM(W) dissipates heat through PCB, unlike IXTH160N10L’s isolated tab.
How does the TK160F10N1L,LQ perform in paralleled configurations for high-power PSFB converters, and what are the risks of current imbalance?
The TK160F10N1L,LQ can be paralleled in phase-shifted full-bridge (PSFB) converters, but its positive temperature coefficient for Rds(on) above 2.4mΩ (while weak) helps moderate imbalance. Still, layout asymmetry or gate loop inductance mismatch can dominate current sharing. To minimize risk, use identical trace lengths, symmetric routing, and individual gate resistors. Avoid paralleling without current-sharing verification under worst-case thermal conditions. Localized hotspots may occur if one device sees higher thermal resistance due to PCB variation.
What are the reliability risks of operating the TK160F10N1L,LQ near its ±20V gate-source voltage limit in industrial environments with voltage transients?
Operating the TK160F10N1L,LQ near its ±20V Vgs(max) limit increases susceptibility to gate oxide degradation due to ringing or noise in industrial settings. Even sub-microsecond transients from inductive loads can exceed this threshold. Always derate to ≤±15V gate drive and include a low-inductance path with a TVS diode (e.g., 15V CDSOT23-S07) across Vgs. Poor PCB layout or long gate traces increase risk of oscillation, which accelerates wear-out. Confirm drive waveform fidelity under load using a 10x probe with ground spring at the device pins.
How does the input capacitance of 10100 pF at 10V affect switching losses in the TK160F10N1L,LQ when used in a 100 kHz synchronous buck converter?
The high Ciss of 10100 pF in the TK160F10N1L,LQ increases gate drive power requirements and switching losses in 100 kHz buck converters, especially when hard-switched. At 100 kHz, gate charge loss per device is approximately Pgate = Qg × Vgs × fsw = 122nC × 10V × 100kHz = 122mW—this does not include turn-off losses. Use a dedicated gate driver IC (e.g., TC4427) to ensure fast switching and minimize cross-conduction. Also consider soft-switching topologies or lower-frequency operation to manage heat if multiple TK160F10N1L,LQ devices are used in interleaved stages.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
TK160F10N1L,LQ CAD Models
Toshiba Semiconductor and Storage TK160F10N1L,LQ PCB symbols & footprints
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