TLE2064BMJB >
TLE2064BMJB
Texas Instruments
IC OPAMP JFET 4 CIRCUIT 14CDIP
1707 Pcs New Original In Stock
J-FET Amplifier 4 Circuit 14-CDIP
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TLE2064BMJB Texas Instruments
5.0 / 5.0 - (507 Ratings)

TLE2064BMJB

Product Overview

12948041

DiGi Electronics Part Number

TLE2064BMJB-DG

Manufacturer

Texas Instruments
TLE2064BMJB

Description

IC OPAMP JFET 4 CIRCUIT 14CDIP

Inventory

1707 Pcs New Original In Stock
J-FET Amplifier 4 Circuit 14-CDIP
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 134.0184 134.0184
  • 200 51.8640 10372.8000
  • 500 50.0408 25020.4000
  • 1000 49.1411 49141.1000
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TLE2064BMJB Technical Specifications

Category Linear, Amplifiers, Instrumentation, Op Amps, Buffer Amps

Manufacturer Texas Instruments

Packaging Bulk

Series -

Product Status Active

Amplifier Type J-FET

Number of Circuits 4

Output Type -

Slew Rate 3.4V/µs

Gain Bandwidth Product 2 MHz

Current - Input Bias 4 pA

Voltage - Input Offset 900 µV

Current - Supply 1.25mA (x4 Channels)

Current - Output / Channel 80 mA

Voltage - Supply Span (Min) 7 V

Voltage - Supply Span (Max) 36 V

Operating Temperature -55°C ~ 125°C (TA)

Mounting Type Through Hole

Package / Case 14-CDIP (0.300", 7.62mm)

Supplier Device Package 14-CDIP

Datasheet & Documents

HTML Datasheet

TLE2064BMJB-DG

Environmental & Export Classification

ECCN EAR99
HTSUS 8542.33.0001

Additional Information

Other Names
TEXTISTLE2064BMJB
2156-TLE2064BMJB
Standard Package
5

Reviews

5.0/5.0-(Show up to 5 Ratings)
Ail***Feu
de desembre 02, 2025
5.0
Le colis est arrivé rapidement et était très bien emballé, parfait pour la sécurité.
Zeit***eiger
de desembre 02, 2025
5.0
Jede Beratung bei DiGi Electronics war herzlich und kompetent – so wünscht man sich Shopping.
ふわ***おずき
de desembre 02, 2025
5.0
アフターサポートも迅速かつ丁寧で、大変満足しています。信頼できる企業です。
朝***もに
de desembre 02, 2025
5.0
配送の迅速さと丈夫な梱包に満足しています。
Moon***mMama
de desembre 02, 2025
5.0
Great value and a seamless online shopping experience every time.
Radi***Roots
de desembre 02, 2025
5.0
The price advantages here are evident compared to other tech stores in the market.
Gent***reeze
de desembre 02, 2025
5.0
DiGi Electronics' customer service is top-notch, making our bulk ordering process smooth.
Peace***Peony
de desembre 02, 2025
5.0
I find their customer support to be prompt, professional, and helpful.
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Frequently Asked Questions (FAQ)

What are the key design-in risks when using the TLE2064BMJB in a high-temperature industrial control circuit operating near 125°C?

When designing the TLE2064BMJB into high-temperature environments near its 125°C maximum operating limit, key risks include increased input bias current and potential offset voltage drift, even though the device is rated for this range. Real-world performance may vary due to thermal gradients across the 14-CDIP package. To mitigate, use tight PCB thermal management—minimize copper thermal vias near input pins—and simulate worst-case DC errors over temperature. Also, derate long-term reliability by monitoring junction temperature; consider adding thermal relief or choosing a surface-mount alternative with better thermal coupling if prolonged high-temp operation is expected.

How does the TLE2064BMJB compare to the LF444CN in multi-op-amp JFET applications requiring low input bias current?

The TLE2064BMJB and LF444CN both offer JFET input stages with low input bias current (4 pA typ for TLE2064BMJB vs. 50 pA for LF444CN), but the TLE2064BMJB provides superior performance in precision contexts due to lower bias current and better temperature stability over -55°C to 125°C. Additionally, the TLE2064BMJB has a tighter max input offset voltage (900 µV vs. 3 mV for LF444CN) and higher temperature rating. However, the LF444CN is in a plastic DIP package and may be cheaper for commercial applications. For precision industrial designs, the TLE2064BMJB is preferred, especially when temperature extremes and long-term drift are concerns.

Can the TLE2064BMJB reliably drive a 1 kΩ load in a single-supply sensor interface configuration?

Yes, the TLE2064BMJB can drive a 1 kΩ load in single-supply configurations, but design constraints must be observed. With 80 mA output current per channel, it can easily handle 1 kΩ loads, but under single-supply operation (e.g., 12 V), ensure the input common-mode voltage stays above the minimum required (typically 3 V above negative rail for JFET amps). Also, verify that the output swing remains within limits—TLE2064BMJB provides rail-to-rail current but not full voltage swing. Use buffered voltage references for biasing and avoid capacitive loading beyond 100 pF without isolation resistance to prevent instability.

What are the reliability implications of using the TLE2064BMJB in legacy through-hole designs requiring long-term availability?

The TLE2064BMJB's through-hole 14-CDIP package supports legacy system maintenance and high-reliability applications, but poses long-term availability risks due to declining adoption of through-hole components. While Texas Instruments lists the device as active, end-of-life risk increases over time. For mission-critical or long-lifecycle systems, secure extended lifecycle buys or explore obsolescence mitigation with authorized distributors. Additionally, assess whether surface-mount alternatives like the TLE2064-EP (with similar specs) can be adapted via adapter PCBs to future-proof supply chains while maintaining circuit functionality.

What PCB layout practices should be followed to maintain optimal noise performance with the TLE2064BMJB in high-impedance analog front-ends?

To maintain optimal noise performance with the TLE2064BMJB in high-impedance circuits, implement guard rings around input traces using the common or low-impedance ground to reduce leakage currents due to contamination or humidity. Keep input traces as short as possible and avoid routing under the 14-CDIP package to prevent capacitive coupling. Use a clean, split ground plane with star grounding at the supply point, and decouple each supply pin with a 0.1 µF ceramic capacitor placed within 5 mm of the device. Additionally, ensure the surrounding area is free of flux residue—ionic contamination can degrade the ultra-low 4 pA bias current performance over time.

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