MSP430FR2111IPW16R >
MSP430FR2111IPW16R
Texas Instruments
IC MCU 16BIT 3.75KB FRAM 16TSSOP
15117 Pcs New Original In Stock
MSP430 CPU16 MSP430™ FRAM Microcontroller IC 16-Bit 16MHz 3.75KB (3.75K x 8) FRAM 16-TSSOP
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MSP430FR2111IPW16R Texas Instruments
5.0 / 5.0 - (407 Ratings)

MSP430FR2111IPW16R

Product Overview

1295045

DiGi Electronics Part Number

MSP430FR2111IPW16R-DG

Manufacturer

Texas Instruments
MSP430FR2111IPW16R

Description

IC MCU 16BIT 3.75KB FRAM 16TSSOP

Inventory

15117 Pcs New Original In Stock
MSP430 CPU16 MSP430™ FRAM Microcontroller IC 16-Bit 16MHz 3.75KB (3.75K x 8) FRAM 16-TSSOP
Quantity
Minimum 1

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MSP430FR2111IPW16R Technical Specifications

Category Embedded, Microcontrollers

Manufacturer Texas Instruments

Packaging Cut Tape (CT) & Digi-Reel®

Series MSP430™ FRAM

Product Status Active

DiGi-Electronics Programmable Not Verified

Core Processor MSP430 CPU16

Core Size 16-Bit

Speed 16MHz

Connectivity I2C, SCI, SPI, UART/USART

Peripherals Brown-out Detect/Reset, POR, PWM, WDT

Number of I/O 12

Program Memory Size 3.75KB (3.75K x 8)

Program Memory Type FRAM

EEPROM Size -

RAM Size 1K x 8

Voltage - Supply (Vcc/Vdd) 1.8V ~ 3.6V

Data Converters A/D 8x10b

Oscillator Type Internal

Operating Temperature -40°C ~ 85°C (TA)

Mounting Type Surface Mount

Supplier Device Package 16-TSSOP

Package / Case 16-TSSOP (0.173", 4.40mm Width)

Base Product Number MSP430FR2111

Datasheet & Documents

Manufacturer Product Page

MSP430FR2111IPW16R Specifications

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 2 (1 Year)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.31.0001

Additional Information

Other Names
296-47344-6
296-47344-2
296-47344-1
MSP430FR2111IPW16R-DG
Standard Package
2,000

Reviews

5.0/5.0-(Show up to 5 Ratings)
달***께
de desembre 02, 2025
5.0
항상 배송 일정에 맞춰져 있어 작업에 차질이 없었고, 고객 지원 역시 훌륭합니다.
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de desembre 02, 2025
5.0
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de desembre 02, 2025
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Frequently Asked Questions (FAQ)

What are the key design risks when replacing an older MSP430G2553 with the MSP430FR2111IPW16R in a battery-powered sensor node, and how can they be mitigated?

The MSP430FR2111IPW16R offers FRAM-based non-volatile memory and lower active current compared to the flash-based MSP430G2553, but its 3.75KB FRAM may require code optimization if migrating from a 16KB device. Additionally, the FR2111 lacks hardware multiplier and has only 12 I/Os versus 24 on the G2553—verify pin compatibility and peripheral usage early. Mitigate risk by recompiling your existing code with the latest MSP430 GCC or IAR toolchain, enabling FRAM wait-state configuration for 16MHz operation, and using the EnergyTrace™ tool to validate power profiles under real workloads. Always confirm brown-out reset thresholds match your system’s voltage regulator behavior.

Can the MSP430FR2111IPW16R reliably operate at 16MHz from a 1.8V supply in an industrial environment, and what oscillator stability precautions are needed?

Yes, the MSP430FR2111IPW16R supports 16MHz operation down to 1.8V per its datasheet, but FRAM access requires correct wait-state settings (typically 1 wait state at VDD < 2.5V). In industrial settings (-40°C to 85°C), internal oscillator drift can exceed ±2% without calibration. For timing-critical UART or SPI communication, calibrate the DCO using the factory-trimmed values stored in Info memory, or consider an external 32kHz crystal for RTC and low-power modes. Avoid relying solely on the internal VLOCLK for precise timing—it can vary by ±30% over temperature. Use the CS module’s MODOSC as a stable 5MHz reference if available peripherals allow.

How does the MSP430FR2111IPW16R compare to the STM32G031K8T6 for ultra-low-power data logging applications, and when should I avoid the TI part?

The MSP430FR2111IPW16R excels in sub-1µA sleep currents and instant wake-up due to FRAM’s fast write speed (no erase cycles), making it ideal for frequent, small-data logging. However, the STM32G031K8T6 offers 64KB Flash, 8KB RAM, and a Cortex-M0+ core with higher compute throughput and built-in DMA—better suited for complex sensor fusion or protocol stacks. Avoid the MSP430FR2111IPW16R if your application needs >4KB of non-volatile storage, frequent large-block writes (FRAM endurance is ~10^15 cycles but write energy matters), or advanced peripherals like USB or advanced timers. Also, STM32’s wider ecosystem simplifies debugging with standard ARM tools.

What layout and decoupling practices are critical when designing a PCB with the MSP430FR2111IPW16R to prevent FRAM corruption during brown-out events?

FRAM is immune to write corruption during power loss (unlike Flash), but improper decoupling can cause voltage droops that trigger unintended resets or CPU halts. Place a 100nF ceramic capacitor within 2mm of the VDD pin and add a 1–10µF bulk capacitor nearby. Ensure the ground return path under the 16-TSSOP package is solid—use a ground plane and avoid splits. Configure the BOR (Brown-Out Reset) level to match your regulator’s dropout (e.g., BOR level 1 for 1.8V systems). Monitor VCC with the internal ADC periodically if brown-out timing is critical. Never route high-speed digital signals under the MCU; this can couple noise into analog inputs or the internal oscillator.

Is the MSP430FR2111IPW16R suitable for replacing an ATtiny85 in a 3V coin-cell-powered IoT edge node, and what firmware changes are typically required?

The MSP430FR2111IPW16R can replace the ATtiny85 with advantages like FRAM data retention and better low-power modes, but it requires significant firmware adaptation. The ATtiny85 uses AVR instruction set and Arduino-compatible toolchains, while the MSP430FR2111IPW16R needs Code Composer Studio, IAR, or MSP430-GCC. You’ll need to rewrite I/O, timer, and UART code using TI’s HAL libraries. Also, the MSP430’s 16-bit architecture handles interrupts differently—ensure your ISRs are re-entrant if using FRAM variables. On the plus side, the FR2111’s 1KB RAM and FRAM enable persistent state storage without EEPROM emulation. Validate total system current: while both run <1µA in LPM3, the MSP430’s higher active current (100µA/MHz) may reduce battery life if CPU duty cycle exceeds ~5%.

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