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LMG1205YFXT
Texas Instruments
IC GATE DRVR HALF-BRIDGE 12DSBGA
2180 Pcs New Original In Stock
Half-Bridge Gate Driver IC TTL 12-DSBGA
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5.0 / 5.0
- (157 Ratings)
LMG1205YFXT
Product Overview
1344643
DiGi Electronics Part Number
LMG1205YFXT-DGManufacturer
Texas Instruments
LMG1205YFXT
Description
IC GATE DRVR HALF-BRIDGE 12DSBGAInventory
2180 Pcs New Original In Stock
Half-Bridge Gate Driver IC TTL 12-DSBGA
Quantity
Minimum 1
Minimum 1
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LMG1205YFXT Technical Specifications
Category
Power Management (PMIC), Gate Drivers
Packaging
Cut Tape (CT) & Digi-Reel®
Series
-
Product Status
Active
DiGi-Electronics Programmable
Not Verified
Driven Configuration
Half-Bridge
Channel Type
Independent
Number of Drivers
2
Gate Type
N-Channel MOSFET
Voltage - Supply
4.5V ~ 5.5V
Logic Voltage - VIL, VIH
1.76V, 1.89V
Current - Peak Output (Source, Sink)
1.2A, 5A
Input Type
TTL
High Side Voltage - Max (Bootstrap)
100 V
Rise / Fall Time (Typ)
7ns, 3.5ns
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Package / Case
12-WFBGA, DSBGA
Supplier Device Package
12-DSBGA
Base Product Number
LMG1205
Datasheet & Documents
Manufacturer Product Page
LMG1205YFXT Specifications
HTML Datasheet
LMG1205YFXT-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.39.0001
Additional Information
Other Names
296-49744-2
296-49744-1
296-49744-6
LMG1205YFXT-DG
Standard Package
250
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
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de desembre 02, 2025
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de desembre 02, 2025
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Frequently Asked Questions (FAQ)
What are the key design-in risks when using the LMG1205YFXT in a high-frequency half-bridge gate driver application, and how can they be mitigated?
When integrating the LMG1205YFXT into high-frequency switch-mode designs (e.g., >500kHz), parasitic inductance in the layout can lead to shoot-through or erratic switching due to rapid dV/dt transients. The LMG1205YFXT has fast rise/fall times (7ns/3.5ns), which exacerbate noise coupling. To mitigate, minimize gate loop inductance using tight PCB layouts with Kelvin connections where possible, place 1–10Ω gate resistors close to MOSFETs, and ensure proper grounding with a solid low-impedance plane under the 12-DSBGA package. Avoid shared source paths between high-side and low-side drivers to prevent common-source inductance issues in the LMG1205YFXT implementation.
Can the LMG1205YFXT directly replace the MIC5018 or TC4427A in existing designs, and what compatibility issues should be considered?
While the LMG1205YFXT can functionally replace the MIC5018 and TC4427A as a half-bridge driver, critical differences exist. The LMG1205YFXT uses an independent input structure with TTL logic thresholds (VIH/VIL ~1.89V/1.76V), which may not be compatible with 3.3V-only logic without level shifting—unlike the TC4427A’s CMOS-compatible inputs. Also, the MIC5018 has higher peak sink current (6A vs. 5A), so check thermal margins when driving large FETs. The 12-DSBGA footprint of the LMG1205YFXT differs from DIP/SOIC packages of the others, requiring PCB redesign. Confirm bootstrap diode reliability and UVLO thresholds match your system’s startup behavior.
How does the LMG1205YFXT handle shoot-through prevention during fast switching transitions in motor drive applications?
The LMG1205YFXT does not include built-in shoot-through protection such as interlocking logic or adaptive dead time. Instead, it relies on independent control of each channel via external PWM signals with dead time inserted by the controller. In motor control or LLC converters using the LMG1205YFXT, improper timing can cause shoot-through, especially with fast 1.2A source and 5A sink capability. Designers must ensure precise dead time (typically 100–500ns) using capable microcontrollers or dedicated PWM generators. Consider adding desaturation monitoring or external RC delay networks in cost-sensitive designs where controller resources are limited.
What thermal and reliability concerns should be addressed when operating the LMG1205YFXT at its maximum junction temperature of 125°C in industrial environments?
Operating the LMG1205YFXT near 125°C increases electro-migration risk in the 12-DSBGA package and affects long-term reliability. Ensure the PCB includes adequate copper for thermal dissipation—such as a thermal pad connected to internal ground planes with multiple vias—to maintain the junction below 110°C under sustained high-current switching. Monitor power loss due to high-side bootstrap operation; insufficient recharging during long duty cycles can degrade performance before thermal shutdown. Also, consider conformal coating in humid or corrosive industrial environments, even though the LMG1205YFXT meets MSL1 and is ROHS3 compliant.
What are the limitations of the LMG1205YFXT’s bootstrap-based high-side drive, and how can they affect sustained high-duty-cycle operation?
The LMG1205YFXT relies on a bootstrap capacitor to drive the high-side N-FET, which limits its ability to support 100% duty cycle. During high-duty-cycle operation (e.g., >95%), the bootstrap capacitor cannot recharge because the low-side switch remains off too briefly, causing the high-side gate voltage to collapse. To maintain reliable operation, ensure a minimum low-side conduction time (e.g., >1μs) for capacitor recharge. Alternatively, consider replacing the LMG1205YFXT with a driver featuring integrated charge pump (e.g., UCC27714) for true 100% duty cycle support in applications like inverter startup or DC motor stall conditions. Use a low-ESR bootstrap diode rated for 100V+ as required by the LMG1205YFXT specifications.
Quality Assurance (QC)
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LMG1205YFXT CAD Models
Texas Instruments LMG1205YFXT PCB symbols & footprints
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