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LM5111-1MX/NOPB
Texas Instruments
IC GATE DRVR LOW-SIDE 8SOIC
5419 Pcs New Original In Stock
Low-Side Gate Driver IC Non-Inverting 8-SOIC
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5.0 / 5.0
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LM5111-1MX/NOPB
Product Overview
1370210
DiGi Electronics Part Number
LM5111-1MX/NOPB-DGManufacturer
Texas Instruments
LM5111-1MX/NOPB
Description
IC GATE DRVR LOW-SIDE 8SOICInventory
5419 Pcs New Original In Stock
Low-Side Gate Driver IC Non-Inverting 8-SOIC
Quantity
Minimum 1
Minimum 1
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LM5111-1MX/NOPB Technical Specifications
Category
Power Management (PMIC), Gate Drivers
Packaging
Cut Tape (CT) & Digi-Reel®
Series
-
Product Status
Active
DiGi-Electronics Programmable
Not Verified
Driven Configuration
Low-Side
Channel Type
Independent
Number of Drivers
2
Gate Type
N-Channel MOSFET
Voltage - Supply
3.5V ~ 14V
Logic Voltage - VIL, VIH
0.8V, 2.2V
Current - Peak Output (Source, Sink)
3A, 5A
Input Type
Non-Inverting
Rise / Fall Time (Typ)
14ns, 12ns
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
LM5111
Datasheet & Documents
HTML Datasheet
LM5111-1MX/NOPB-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.39.0001
Additional Information
Other Names
LM51111MXNOPB
2156-LM5111-1MX/NOPB-TI
LM5111-1MX/NOPBDKR
Q3552763B
LM5111-1MX/NOPBCT
LM5111-1MX/NOPBTR
NATNSCLM5111-1MX/NOPB
LM5111-1MX/NOPB-DG
Standard Package
2,500
Alternative Parts
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
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Frequently Asked Questions (FAQ)
Can the LM5111-1MX/NOPB gate driver safely drive high-side N-channel MOSFETs in a bootstrap configuration, or is it strictly limited to low-side applications?
The LM5111-1MX/NOPB is a low-side gate driver and is not designed to directly drive high-side N-channel MOSFETs without additional circuitry. While it can be used in a bootstrap configuration for high-side switching, this requires an external bootstrap diode and capacitor, and careful attention to duty cycle limitations (typically <99%) to ensure proper capacitor recharge. The driver itself lacks integrated level-shifting or high-side supply isolation, so using it for high-side drive introduces reliability risks during extended on-times or low-frequency operation. For robust high-side designs, consider dedicated high-side or half-bridge drivers like the TI UCC27211 or LM5109B instead of repurposing the LM5111-1MX/NOPB beyond its intended low-side use case.
What are the risks of replacing the LM5111-1MX/NOPB with a cheaper alternative like the MIC4427 or TC4427 in a 100 kHz synchronous buck converter?
Replacing the LM5111-1MX/NOPB with the MIC4427 or TC4427 may seem cost-effective, but these alternatives have critical limitations in high-frequency, high-current applications. The MIC4427 has a peak output current of only 1.5A (vs. 3A source / 5A sink in the LM5111-1MX/NOPB), which can lead to slower MOSFET switching, increased switching losses, and potential thermal runaway in a 100 kHz buck converter. Additionally, the TC4427 lacks the LM5111-1MX/NOPB’s wider 3.5V–14V supply range and robust under-voltage lockout (UVLO), increasing susceptibility to erratic behavior during power-up transients. If board space and BOM cost are constraints, a closer functional replacement would be the TI TPS28225, which offers similar drive strength and propagation delay with better thermal performance.
How does the LM5111-1MX/NOPB perform in harsh automotive environments with load dump transients exceeding 40V, and what protection circuitry is recommended?
The LM5111-1MX/NOPB has a maximum supply voltage rating of 14V, making it vulnerable to automotive load dump events that can exceed 40V. Direct exposure will likely destroy the device. To use it safely in automotive applications, you must implement a robust front-end protection circuit including a TVS diode (e.g., SMAJ15A) rated for load dump energy, a series current-limiting resistor, and an LC filter to clamp and filter transients before they reach the VCC pin. Additionally, ensure the input logic signals are level-shifted or clamped if derived from higher-voltage nodes. Without such protection, the LM5111-1MX/NOPB cannot meet automotive reliability standards like ISO 7637-2, and failure modes may include gate oxide breakdown or latch-up.
Is it safe to parallel the two independent channels of the LM5111-1MX/NOPB to drive a single high-current MOSFET in a space-constrained design?
Paralleling the two channels of the LM5111-1MX/NOPB to drive one MOSFET is technically possible but introduces significant risks if not carefully managed. Minor mismatches in propagation delay or output impedance between channels can cause uneven current sharing, leading to one driver sourcing/sinking more current and overheating. To mitigate this, add small gate resistors (e.g., 2–5Ω) in series with each output to balance dynamic current and suppress oscillations. Also, ensure both inputs receive precisely synchronized signals—any skew can cause shoot-through-like stress during transitions. While this approach can boost effective drive current beyond 5A peak, a dedicated single-channel high-current driver like the UCC27531 (9A peak) is a more reliable and thermally efficient solution for high-power designs.
Can the LM5111-1MX/NOPB operate reliably at -40°C in an industrial motor drive application with frequent start-stop cycles, and what layout practices are critical?
Yes, the LM5111-1MX/NOPB is rated for operation down to -40°C (TJ), making it suitable for industrial motor drives, but cold-start reliability depends heavily on PCB layout and decoupling. At low temperatures, MOSFET gate capacitance increases slightly and solder joints become more brittle, so ensure the 8-SOIC package is mounted on a well-soldered pad with adequate thermal vias if needed. Place a low-ESR ceramic capacitor (≥100nF, X7R) as close as possible to the VCC and GND pins to maintain stability during fast switching edges. Avoid long gate drive traces, which can introduce inductance and ringing—especially critical when driving IGBTs or SiC MOSFETs. Also, verify that input logic levels remain above VIH (2.2V) at cold temperatures, as microcontroller outputs may droop, risking false triggering or delayed turn-on.
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LM5111-1MX/NOPB CAD Models
Texas Instruments LM5111-1MX/NOPB PCB symbols & footprints
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