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ADS58C23IPFP
Texas Instruments
IC DUAL IF RCVR 80HTQFP
1891 Pcs New Original In Stock
RF Front End 125MHz Cellular, 3G, LTE, TD-SCDMA 80-HTQFP (12x12)
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5.0 / 5.0
- (273 Ratings)
ADS58C23IPFP
Product Overview
1379166
DiGi Electronics Part Number
ADS58C23IPFP-DGManufacturer
Texas Instruments
ADS58C23IPFP
Description
IC DUAL IF RCVR 80HTQFPInventory
1891 Pcs New Original In Stock
RF Front End 125MHz Cellular, 3G, LTE, TD-SCDMA 80-HTQFP (12x12)
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
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ADS58C23IPFP Technical Specifications
Category
RF Front End (LNA + PA)
Packaging
-
Series
-
Product Status
Active
RF Type
Cellular, 3G, LTE, TD-SCDMA
Frequency
125MHz
Features
-
Package / Case
80-TQFP Exposed Pad
Supplier Device Package
80-HTQFP (12x12)
Base Product Number
ADS58C23
Datasheet & Documents
Manufacturer Product Page
ADS58C23IPFP Specifications
HTML Datasheet
ADS58C23IPFP-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
5A991B1
HTSUS
8542.39.0001
Additional Information
Other Names
ADS58C23IPFP-DG
TEXTISADS58C23IPFP
-296-36548
-296-36548-DG
296-36548
2156-ADS58C23IPFP
Standard Package
96
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
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Frequently Asked Questions (FAQ)
What are the key design-in challenges when integrating the ADS58C23IPFP into a dual-channel IF receiver for LTE baseband applications?
Integrating the ADS58C23IPFP into LTE IF receiver designs requires careful attention to analog input crosstalk between the dual channels, especially when processing adjacent bands. A major risk is improper impedance matching on the RF input traces, which can degrade SFDR performance. To mitigate, use controlled-impedance microstrips with 50-Ω matching and ensure symmetrical layout to maintain channel-to-channel phase coherence. Also, minimize digital switching noise coupling by separating the LVDS output routes from sensitive analog inputs, and use split ground planes tied at a single point near the exposed thermal pad. Power supply noise on AVDD and DVDD must be below 10 mVp-p; a low-noise LDO with ferrite bead isolation per rail is recommended for optimal SNR.
How does the ADS58C23IPFP compare to the MAX1126 in terms of replacement feasibility in an existing 125MHz TD-SCDMA receiver design?
Replacing the MAX1126 with the ADS58C23IPFP in a TD-SCDMA IF receiver introduces both performance gains and integration risks. While the ADS58C23IPFP offers lower power consumption (187 mW vs 320 mW) and better SNR (71.7 dBFS vs 69 dBFS), its pinout and LVDS timing are incompatible with the MAX1126. You’ll need to re-layout the PCB due to different package footprints (80-HTQFP vs 68-QFN). Additionally, the ADS58C23IPFP has internal calibration that affects startup latency—verify timing alignment with FPGA frame sync in your TDD control loop. A full signal integrity and thermal re-validation is strongly advised before committing to the swap.
What thermal management strategies are required for reliable operation of the ADS58C23IPFP in a densely packed macro base station card?
In high-density macro base station designs, the ADS58C23IPFP's 80-HTQFP package with exposed pad can suffer from thermal buildup, especially when operating at full throughput in industrial temperature ranges. The junction-to-air thermal resistance (θJA) can exceed 45°C/W in still air, risking derating or malfunction. To ensure reliability, solder the exposed pad to a solid ground plane using a 3x3 array of thermal vias connected to inner-layer copper pours. Consider forced airflow of at least 200 LFM or integrating a local heatsink if ambient exceeds 60°C. Monitor die temperature via the TMON register during burn-in testing to confirm thermal design adequacy.
What are the signal integrity risks when driving the ADS58C23IPFP’s analog inputs from a quadrature demodulator in a 3G W-CDMA setup?
When driving the ADS58C23IPFP from a quadrature demodulator in W-CDMA applications, the main signal integrity risks include gain/phase mismatch and harmonic distortion due to improper driver amp selection. The ADS58C23IPFP expects a 2Vpp differential input; using an underperforming driver like the LMH6554 may introduce second-order distortion (IMD2) that degrades EVM. Instead, pair it with a high-linearity amplifier such as the THS4521, which provides precise common-mode control and bandwidth headroom. Keep AC-coupling capacitors (e.g., 1 μF) close to the inputs and use tight trace matching (<5 mil difference) to preserve I/Q balance critical for demodulation accuracy.
Under what conditions might the ADS58C23IPFP exhibit reduced dynamic range in a multi-carrier cellular receiver, and how can this be mitigated?
The ADS58C23IPFP may suffer reduced dynamic range in multi-carrier GSM or LTE-A setups when out-of-band blockers exceed +1 dBm due to finite IIP3 (~23 dBm). This causes intermodulation distortion, raising the noise floor. To mitigate, always precede the ADS58C23IPFP with a high-linearity SAW filter or duplexer tuned to the band of interest. Additionally, avoid overdriving the ADC by using variable gain amplifiers (e.g., PGA103) to maintain input signals in the –1 dBFS to –6 dBFS range. Enable the internal digital down-converter (DDC) if available in your configuration to reduce digital post-processing load and improve effective SNR in narrowband applications.
Quality Assurance (QC)
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ADS58C23IPFP CAD Models
Texas Instruments ADS58C23IPFP PCB symbols & footprints
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