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2N2219A
STMicroelectronics
TRANS NPN 30V 0.8A TO39
5017 Pcs New Original In Stock
Bipolar (BJT) Transistor NPN 30 V 800 mA 250MHz 800 mW Through Hole TO-39
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- (462 Ratings)
2N2219A
Product Overview
12877327
DiGi Electronics Part Number
2N2219A-DGManufacturer
STMicroelectronics
2N2219A
Description
TRANS NPN 30V 0.8A TO39Inventory
5017 Pcs New Original In Stock
Bipolar (BJT) Transistor NPN 30 V 800 mA 250MHz 800 mW Through Hole TO-39
Quantity
Minimum 1
Minimum 1
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2N2219A Technical Specifications
Category
Transistors, Bipolar (BJT), Single Bipolar Transistors
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
800 mW
Frequency - Transition
250MHz
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
Base Product Number
2N22
Datasheet & Documents
Datasheets
Download 2N2219A Product Specification (PDF)
HTML Datasheet
2N2219A-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Additional Information
Other Names
497-2595-5-NDR
497-2595-5
Standard Package
500
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
Die Qualität ist superb, und das Personal ist immer sehr freundlich und zuvorkommend.
de desembre 02, 2025
製品の安定性と、アフター対応の良さが特に気に入っています。
de desembre 02, 2025
I feel confident shopping with DiGi Electronics because of their reliable after-sales service.
de desembre 02, 2025
I appreciate the detailed FAQs and live chat options that made resolving issues effortless.
de desembre 02, 2025
Great reliability from DiGi Electronics significantly benefits our operational planning.
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Frequently Asked Questions (FAQ)
Can the 2N2219A be used as a direct replacement for the 2N3053 in a high-frequency amplifier circuit operating near 200MHz?
While the 2N2219A and 2N3053 PBFREE share similar TO-39 packaging and general-purpose NPN functionality, they are not drop-in replacements in high-frequency applications. The 2N2219A has a higher transition frequency (250MHz vs. ~150MHz for the 2N3053), giving it better RF performance. However, the 2N3053 typically offers tighter hFE ranges and improved linearity in analog amplification. When replacing a 2N3053 with a 2N2219A in a 200MHz amplifier, verify stability with proper biasing and consider adding base stopper resistance to prevent oscillation due to the higher gain-bandwidth. Always validate thermal performance under load, as the 2N2219A's 800mW power rating requires adequate PCB heat dissipation in sustained operation.
What are the key design risks when using the 2N2219A in a switching circuit with inductive loads such as relays or solenoids?
Using the 2N2219A to switch inductive loads introduces risks of voltage transients exceeding its 30V collector-emitter breakdown rating. When the transistor turns off, inductive kickback from the load can generate voltage spikes that damage the 2N2219A's collector-base junction. To mitigate this, always use a flyback diode (e.g., 1N4007) across the inductive load, oriented to conduct during negative voltage transients. Additionally, operate the 2N2219A in hard saturation by ensuring an adequate base current (typically Ib ≥ Ic/10 at 150mA hFE) to minimize switching losses and prevent thermal runaway under repetitive switching. Derate switching frequency below 10kHz to ensure reliable performance within its SOA limits.
How does the obsolete status of the 2N2219A impact long-term reliability and supply chain planning for new designs?
Although the 2N2219A is marked as obsolete by STMicroelectronics, current stock availability (4980 pcs) supports short-to-mid-term production. However, its obsolescence poses significant supply chain risk for long-life products. For new designs, consider engineering a backward-compatible footprint that accommodates potential drop-in replacements like the 2N3053 PBFREE or BC547C in TO-92, though performance trade-offs exist. If sticking with the 2N2219A, implement end-of-life (EOL) mitigation: buy in bulk with extended shelf-life storage (dry pack, MSL 1), validate long-term solder joint reliability due to the TO-39 metal can’s coefficient of thermal expansion mismatch with FR4, and initiate redesign plans if volume production exceeds available stock.
What thermal management practices are required when operating the 2N2219A near its maximum 800mW power dissipation in a sealed enclosure?
Operating the 2N2219A near its 800mW limit in a sealed enclosure requires careful thermal design to avoid exceeding its 175°C maximum junction temperature. The TO-39 package has limited thermal conductivity through its leads; therefore, rely on external copper area (≥ 1 sq in on two-layer PCB) or a heatsink clip for passive cooling. Use a thermal vias array under the mounting pad if possible. Monitor junction temperature using worst-case ambient conditions (e.g., 70°C inside enclosure) and derate power dissipation by 6.4mW/°C above 25°C. For reliability, design to stay below 125°C TJ, especially in industrial environments, to avoid accelerated parameter drift and reduce long-term failure risk.
How does the low hFE minimum of 100 at 150mA impact base drive design for the 2N2219A in linear regulation circuits?
The 2N2219A’s minimum hFE of 100 at 150mA means base current must be carefully calculated to ensure full activation, especially in linear regulators where collector current varies. For example, at 500mA load, expect hFE to drop below 100; thus, design for a worst-case hFE of 60–70 in saturation. Use a driver stage (e.g., small-signal NPN like BC847) to provide sufficient Ib ≥ 8–10mA through a low-impedance path, reducing sensitivity to beta variation. Include an emitter resistor for local feedback to stabilize operating point against Vbe and hFE shifts with temperature. Never assume hFE = 100 across all conditions—account for batch variability and thermal effects to avoid underdrive and excessive Vce losses in the 2N2219A.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
2N2219A CAD Models
STMicroelectronics 2N2219A PCB symbols & footprints
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