FJL4315OTU >
FJL4315OTU
onsemi
TRANS NPN 250V 17A TO264-3
2519 Pcs New Original In Stock
Bipolar (BJT) Transistor NPN 250 V 17 A 30MHz 150 W Through Hole TO-264-3
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FJL4315OTU onsemi
5.0 / 5.0 - (301 Ratings)

FJL4315OTU

Product Overview

12846966

DiGi Electronics Part Number

FJL4315OTU-DG

Manufacturer

onsemi
FJL4315OTU

Description

TRANS NPN 250V 17A TO264-3

Inventory

2519 Pcs New Original In Stock
Bipolar (BJT) Transistor NPN 250 V 17 A 30MHz 150 W Through Hole TO-264-3
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.7823 0.7823
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FJL4315OTU Technical Specifications

Category Transistors, Bipolar (BJT), Single Bipolar Transistors

Manufacturer onsemi

Packaging Tube

Series -

Product Status Active

Transistor Type NPN

Current - Collector (Ic) (Max) 17 A

Voltage - Collector Emitter Breakdown (Max) 250 V

Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A

Current - Collector Cutoff (Max) 5µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V

Power - Max 150 W

Frequency - Transition 30MHz

Operating Temperature -50°C ~ 150°C (TJ)

Mounting Type Through Hole

Package / Case TO-264-3, TO-264AA

Supplier Device Package TO-264-3

Base Product Number FJL4315

Datasheet & Documents

HTML Datasheet

FJL4315OTU-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075

Additional Information

Standard Package
25

Reviews

5.0/5.0-(Show up to 5 Ratings)
Page***nche
de desembre 02, 2025
5.0
Leur efficacité dans la gestion des expéditions et leur attention aux détails sont très rassurantes.
Lus***adow
de desembre 02, 2025
5.0
DiGi Electronics’ commitment to on-time delivery really stands out.
Cher***unset
de desembre 02, 2025
5.0
The packaging was both secure and thoughtful, ensuring no damage along the way.
Mist***adow
de desembre 02, 2025
5.0
Delivery timelines are consistently met, showcasing their efficient logistics network.
Rainb***haser
de desembre 02, 2025
5.0
Excellent after-sales support that consistently exceeds my expectations.
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Frequently Asked Questions (FAQ)

What are the key thermal design considerations when using the FJL4315OTU in a high-power application near its 150W maximum rating?

When operating the FJL4315OTU near its 150W power dissipation limit, effective thermal management is critical to avoid thermal runaway and ensure long-term reliability. Due to its TO-264-3 package, the FJL4315OTU requires a robust heatsink with low thermal resistance (preferably <2°C/W) and may need forced air cooling in enclosed environments. Ensure the junction temperature remains below 150°C under worst-case ambient conditions (up to 85°C). Use thermal interface material with low thermal impedance and verify performance with real-world thermal testing, as inadequate heat dissipation can cause premature device failure even if electrical ratings are within spec.

Can the FJL4315OTU replace the MJE13009 or FJP5035 in high-voltage switch-mode power supply designs?

The FJL4315OTU can be considered as a replacement for the MJE13009 or FJP5035 in certain high-voltage applications, but critical differences must be evaluated. Compared to the MJE13009 (400V, 12A), the FJL4315OTU has a lower voltage rating (250V) but higher current capability (17A), making it unsuitable if input transients exceed 250V. Against the FJP5035 (350V, 10A), the FJL4315OTU offers higher current gain (hFE ≥80 vs ~40) and power handling, but lower breakdown voltage. Verify circuit requirements—especially surge tolerance and base drive capability—before substitution, and re-evaluate snubber circuits and derating margins to maintain reliability.

How does the 30MHz transition frequency of the FJL4315OTU impact its suitability for switching applications above 100kHz?

The FJL4315OTU's 30MHz transition frequency (fT) limits its effectiveness in switching applications above ~100kHz, especially when sharp switching edges and minimal storage time are required. While it can function in lower-frequency switch-mode supplies (e.g., 50–100kHz), its relatively slow turn-off characteristics compared to modern RF or high-speed transistors (e.g., >100MHz fT) increase switching losses significantly at higher frequencies. For hard-switched topologies like forward or push-pull converters, consider adding a Baker clamp or active turn-off circuitry to reduce storage time and prevent secondary breakdown during switching transitions.

What are the risks of using the FJL4315OTU in parallel configurations to achieve higher current handling, and how can they be mitigated?

Paralleling multiple FJL4315OTU transistors to achieve currents beyond 17A introduces risks of current imbalance due to variations in Vbe and hFE, potentially leading to thermal runaway in one device. To mitigate this, use individual emitter ballast resistors (typically 0.1–0.47Ω, 5W) to promote current sharing. Additionally, mount all devices on the same heatsink to ensure uniform temperature and use matched transistors where possible. Include negative feedback in the drive circuit and ensure symmetrical PCB layout and lead lengths to minimize impedance mismatches that could exacerbate imbalance.

Under what conditions might the FJL4315OTU experience secondary breakdown in inductive load switching, and how can it be avoided?

The FJL4315OTU is susceptible to secondary breakdown during inductive load switching when high voltage and high current coincide during turn-off, particularly in circuits without proper protection. This is common in motor drives or relay drivers where inductive kickback creates Vce stress beyond safe operating area (SOA) limits. To avoid failure, always operate within the FJL4315OTU's SOA curves—derating significantly at high voltages—and implement protective measures such as snubber networks (RC or RCD), freewheeling diodes, or active clamping. Ensure base drive is strong enough to provide fast, clean switching and avoid operating in linear mode under high voltage stress for extended periods.

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