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FDMS3669S
onsemi
MOSFET 2N-CH 30V 13A/18A POWER56
19620 Pcs New Original In Stock
Mosfet Array 30V 13A, 18A 1W Surface Mount Power56
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5.0 / 5.0
- (489 Ratings)
FDMS3669S
Product Overview
12851000
DiGi Electronics Part Number
FDMS3669S-DGManufacturer
onsemi
FDMS3669S
Description
MOSFET 2N-CH 30V 13A/18A POWER56Inventory
19620 Pcs New Original In Stock
Mosfet Array 30V 13A, 18A 1W Surface Mount Power56
Quantity
Minimum 1
Minimum 1
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FDMS3669S Technical Specifications
Category
Transistors, FETs, MOSFETs, FET, MOSFET Arrays
Packaging
Cut Tape (CT) & Digi-Reel®
Series
PowerTrench®
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
13A, 18A
Rds On (Max) @ Id, Vgs
10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1605pF @ 15V
Power - Max
1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
Power56
Base Product Number
FDMS3669
Datasheet & Documents
HTML Datasheet
FDMS3669S-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
FDMS3669SCT
FDMS3669SDKR
2156-FDMS3669S-OS
2832-FDMS3669STR
FDMS3669STR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
항상 빠른 배송과 알찬 가격이 만족스럽습니다.
de desembre 02, 2025
在 DiGi Electronics 購買的商品，一直都很穩定，售後服務也非常用心，值得信賴。
de desembre 02, 2025
迅速な発送のおかげで、急ぎのプロジェクトもスムーズに進行できました。感謝しています！
de desembre 02, 2025
DiGi Electronics' products deliver reliable performance that enhances gaming, all at a budget-friendly price.
de desembre 02, 2025
The overall site usability is excellent, making every step from browsing to checkout simple.
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Frequently Asked Questions (FAQ)
When integrating the onsemi FDMS3669S into a 30V, 15A synchronous buck converter, what is the primary risk associated with its 13A continuous drain current rating for one of the N-channel MOSFETs, and how can this be mitigated?
The primary risk when using the FDMS3669S in a 30V, 15A synchronous buck converter is that one of its N-channel MOSFETs is rated for 13A continuous drain current, while the other is rated for 18A. Under heavy load conditions exceeding 13A, the 13A-rated FET could experience excessive junction temperatures, leading to premature failure. To mitigate this, ensure the load distribution between the two channels is carefully managed. If continuous operation above 13A is required, consider a different dual MOSFET with symmetrical, higher current ratings for both channels or use two discrete MOSFETs with appropriate current handling capabilities. Alternatively, implementing a thermal management solution like increased PCB copper pour around the FDMS3669S package can help dissipate heat more effectively, but this is a secondary mitigation strategy and not a substitute for adequate component selection.
For a battery-powered portable device operating at 24V, what are the potential design pitfalls of using the onsemi FDMS3669S if the Vgs(th) is 2.7V, especially when driven by a microcontroller's GPIO with a nominal 3.3V output?
The potential design pitfall of using the onsemi FDMS3669S with a 3.3V microcontroller GPIO is that the threshold voltage Vgs(th) of 2.7V might not guarantee full enhancement (turn-on) of the MOSFET under all operating conditions, especially with process variations or temperature fluctuations. While 3.3V is higher than 2.7V, the FDMS3669S is a logic-level gate MOSFET, implying it's designed for lower gate drive voltages. However, achieving the lowest Rds(on) requires a gate-source voltage significantly above Vgs(th). A Vgs of 3.3V might result in higher than expected Rds(on), leading to increased conduction losses, reduced efficiency, and potentially overheating in the FDMS3669S. To mitigate this, confirm the actual Vgs required for the desired Rds(on) using the datasheet curves and consider a dedicated gate driver IC or ensure the microcontroller's output can reliably swing to a voltage closer to 5V or higher if the application demands the absolute minimum Rds(on) for the FDMS3669S.
When replacing an older dual N-channel MOSFET in a 30V motor control application with the onsemi FDMS3669S, what are the key risks if the original part had a higher Drain to Source Voltage (Vdss) rating than the FDMS3669S's 30V?
The key risk when replacing a dual N-channel MOSFET with a higher Vdss rating with the onsemi FDMS3669S (30V Vdss) is the potential for overvoltage transients to exceed the FDMS3669S's breakdown voltage. If the original system was designed with a margin for higher voltage spikes (e.g., from inductive load switching), the FDMS3669S may not provide adequate protection. This could lead to avalanche breakdown, permanent damage to the MOSFET, and potential cascading failures in the circuit. To mitigate this risk, carefully analyze the voltage transients in your motor control application. If significant overvoltage events are expected, it's crucial to implement a robust snubber circuit or clamp the voltage using a higher Vdss rated component. Alternatively, if the FDMS3669S is a direct functional replacement for a system that never experienced overvoltage issues, then its 30V rating may suffice, but this requires thorough validation.
For a power management IC (PMIC) requiring two N-channel MOSFETs for a battery disconnect function in a 30V system, what are the trade-offs of using the asymmetrical FDMS3669S compared to a symmetrical dual MOSFET like the FDMS3660S, considering the FDMS3669S has differing current ratings?
The trade-offs of using the asymmetrical onsemi FDMS3669S versus a symmetrical dual MOSFET like the FDMS3660S for a battery disconnect function in a 30V system center on current handling and potential thermal management. The FDMS3669S has differing current ratings (13A and 18A), which might be advantageous if one path inherently handles less current or if space is extremely constrained and the smaller footprint of one FET is beneficial. However, for a battery disconnect, symmetrical load sharing is often preferred to ensure both devices can handle the maximum expected current equally, especially during fault conditions or inrush. Using the asymmetrical FDMS3669S introduces a risk if the current distribution is not precisely known or if fault conditions could lead to uneven loading. The FDMS3660S, with symmetrical ratings, offers simpler thermal analysis and better fault tolerance for this specific application. If the FDMS3669S is chosen, careful analysis of current paths and potential fault scenarios is critical to avoid exceeding the 13A rating of one of its channels.
In a high-frequency switching application where minimizing gate charge (Qg) is critical for efficiency, how does the FDMS3669S's maximum Qg of 24nC @ 10V compare to other common 30V N-channel MOSFETs, and what is the risk if this value is higher than anticipated?
The onsemi FDMS3669S's maximum gate charge (Qg) of 24nC @ 10V is a key parameter for high-frequency switching efficiency. While this value is competitive for its class, it's essential to compare it against specific competitor parts for your application. If the FDMS3669S's Qg is higher than a chosen alternative, the risk is increased switching losses. Higher Qg means the gate driver needs to supply more charge to switch the MOSFET on and off, resulting in more power dissipation within the gate driver and the MOSFET itself during the switching transitions. This can lead to reduced overall system efficiency, increased thermal stress on the FDMS3669S, and potentially require a more robust or higher-power gate driver. To mitigate this risk, always compare the FDMS3669S's Qg against competitor datasheets at the relevant Vgs and ensure your gate driver circuit has sufficient current drive capability to switch the FDMS3669S quickly and efficiently without excessive power loss.
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FDMS3669S CAD Models
onsemi FDMS3669S PCB symbols & footprints
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