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FDMA530PZ
onsemi
MOSFET P-CH 30V 6.8A 6MICROFET
29408 Pcs New Original In Stock
P-Channel 30 V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
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5.0 / 5.0
- (117 Ratings)
FDMA530PZ
Product Overview
12851153
DiGi Electronics Part Number
FDMA530PZ-DGManufacturer
onsemi
FDMA530PZ
Description
MOSFET P-CH 30V 6.8A 6MICROFETInventory
29408 Pcs New Original In Stock
P-Channel 30 V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
Quantity
Minimum 1
Minimum 1
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FDMA530PZ Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Cut Tape (CT) & Digi-Reel®
Series
PowerTrench®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1070 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-MicroFET (2x2)
Package / Case
6-WDFN Exposed Pad
Base Product Number
FDMA530
Datasheet & Documents
HTML Datasheet
FDMA530PZ-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
FDMA530PZTR
2156-FDMA530PZ-OS
FDMA530PZCT
FDMA530PZDKR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
예산 고민 없이 필요한 전자제품을 구입할 수 있어서 좋아요. 그리고 고객 서비스가 정말 친절합니다.
de desembre 02, 2025
從下單到收貨只用了兩天，整個過程都很順利，物流效率很高！
de desembre 02, 2025
アフターサービスが充実していて、長い付き合いになっています。
de desembre 02, 2025
Their shipping logistics are well-organized, enabling rapid delivery even for bulk orders.
de desembre 02, 2025
Their products consistently meet my high standards for electronic repairs.
de desembre 02, 2025
Diegi Electronics’ customer support is truly outstanding—highly recommended.
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Frequently Asked Questions (FAQ)
What are the key reliability risks when using the FDMA530PZ in high-vibration automotive applications, and how can layout and thermal management mitigate them?
The FDMA530PZ, packaged in a compact 6-MicroFET (2x2) WDFN with an exposed pad, is susceptible to mechanical stress and thermal fatigue in high-vibration environments like automotive under-hood systems. The small footprint increases risk of solder joint cracking under repeated thermal cycling or mechanical shock. To mitigate this, use a robust solder paste (e.g., SAC305 with Ni addition), ensure full wetting of the exposed thermal pad with adequate via stitching to the ground plane, and avoid placing the device near board edges or stiffeners. Implement underfill if subjected to extreme vibration. Additionally, maintain TJ below 125°C during operation to reduce thermomechanical stress—leverage the low Rds(on) of 35mΩ @ 10V to minimize self-heating and consider copper pour extensions for passive cooling.
Can the FDMA530PZ safely replace the Infineon BSS84P in a 5V logic-level load switch application, and what design changes are needed?
Direct replacement of the BSS84P with the FDMA530PZ is not recommended without design adjustments. While both are P-channel MOSFETs, the FDMA530PZ has a higher Vgs(th) max of 3V (vs. ~1.5V for BSS84P) and requires at least 4.5V gate drive to achieve low Rds(on). At 5V Vgs, the FDMA530PZ may operate in linear region with elevated conduction losses. To safely substitute, ensure your gate driver can supply a clean 5V or higher (ideally 10V) to fully enhance the channel. Also, verify that the 6.8A continuous current capability and 30V Vdss of the FDMA530PZ meet or exceed your load requirements. Update layout to accommodate the 2x2mm footprint and exposed pad, which differs from the SOT-23 of the BSS84P, and add local decoupling to manage the higher Ciss (1070pF) for stable switching.
How does the gate charge (Qg) of the FDMA530PZ impact switching performance in battery-powered IoT devices, and what driver considerations are critical?
With a max gate charge (Qg) of 24nC @ 10V, the FDMA530PZ offers relatively efficient switching for a 30V P-channel MOSFET, but in ultra-low-power IoT designs, even this can significantly affect battery life if driven improperly. High Qg demands stronger gate drive current during transitions, increasing dynamic power consumption. To optimize efficiency, use a dedicated low-quiescent-current gate driver (e.g., TI TPS22860) capable of sourcing/sinking ≥100mA to minimize transition times. Avoid resistive gate pull-ups; instead, use active pull-down circuits to speed turn-off. Also, consider operating at the minimum viable Vgs (e.g., 4.5V instead of 10V) if system voltage allows, as Qg scales with Vgs—this reduces drive energy per switch cycle, extending battery runtime in duty-cycled applications.
What thermal derating strategy should be applied when using the FDMA530PZ in an enclosed industrial control module with ambient temperatures up to 85°C?
The FDMA530PZ has a max power dissipation of 2.4W at 25°C ambient, but this must be heavily derated at 85°C due to the 150°C TJ limit and limited thermal resistance (RθJA ~52°C/W typical for 2x2mm package on standard PCB). At 85°C ambient, allowable power drops to approximately 1.25W—translating to a max continuous current of ~6A even with ideal heatsinking. In enclosed modules, rely on copper area and thermal vias under the exposed pad to conduct heat to inner layers or a metal chassis. Use a 2-layer board with 2 oz copper and ≥9 thermal vias (0.3mm diameter) under the pad. Monitor case temperature empirically and consider forced airflow if losses exceed 1W. Avoid placing heat-sensitive components nearby, and validate thermal performance with IR imaging under worst-case load conditions.
Is the FDMA530PZ suitable for hot-swap or inrush current limiting applications, and what external circuitry is required to prevent failure?
The FDMA530PZ can be used in hot-swap applications but requires external circuitry to manage inrush current and voltage spikes, as it lacks integrated protection. Its 30V Vdss rating limits use to ≤24V systems (with margin), and the 2.4W power limit means sustained overloads can cause thermal runaway. Implement a gate-controlled soft-start circuit using an RC network or dedicated hot-swap controller (e.g., LTC4215) to gradually ramp Vgs and limit di/dt. Add a TVS diode across drain-source to clamp inductive kickback and a current-sense resistor with comparator for overcurrent shutdown. Ensure the layout minimizes loop inductance to reduce voltage overshoot during turn-on. Without these safeguards, repetitive inrush events may degrade the oxide layer or cause latch-up, especially near the ±25V Vgs(max) limit.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
FDMA530PZ CAD Models
onsemi FDMA530PZ PCB symbols & footprints
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