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BUK9K13-60RAX
Nexperia USA Inc.
MOSFET 2N-CH 60V 40A LFPAK56D
1365 Pcs New Original In Stock
Mosfet Array 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D
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5.0 / 5.0
- (168 Ratings)
BUK9K13-60RAX
Product Overview
12950050
DiGi Electronics Part Number
BUK9K13-60RAX-DGManufacturer
Nexperia USA Inc.
BUK9K13-60RAX
Description
MOSFET 2N-CH 60V 40A LFPAK56DInventory
1365 Pcs New Original In Stock
Mosfet Array 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D
Quantity
Minimum 1
Minimum 1
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BUK9K13-60RAX Technical Specifications
Category
Transistors, FETs, MOSFETs, FET, MOSFET Arrays
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
40A (Ta)
Rds On (Max) @ Id, Vgs
11.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
2953pF @ 25V
Power - Max
64W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SOT-1205, 8-LFPAK56
Supplier Device Package
LFPAK56D
Base Product Number
BUK9K13
Datasheet & Documents
HTML Datasheet
BUK9K13-60RAX-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
1727-BUK9K13-60RAXCT
934662536115
5202-BUK9K13-60RAXTR
1727-BUK9K13-60RAXTR
1727-BUK9K13-60RAXDKR
Standard Package
1,500
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
商品配送速度令人印象深刻，幾乎每天都能看到最新的物流信息更新。
de desembre 02, 2025
Je recommande vivement DiGi Electronics pour leur excellent stock et leur accompagnement après-vente toujours attentionné.
de desembre 02, 2025
DiGiエレクトロニクスの製品は耐久性があり、コストパフォーマンスも抜群です。
de desembre 02, 2025
Excellent prices and a friendly team make DiGi Electronics my preferred store.
de desembre 02, 2025
DiGi Electronics makes sure every customer feels valued with their support and prices.
de desembre 02, 2025
The after-sales support team is always available and eager to assist.
de desembre 02, 2025
The customer service at DiGi Electronics is top-notch, always professional and attentive.
de desembre 02, 2025
The shipping process was transparent and very swift from start to finish.
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Frequently Asked Questions (FAQ)
Can the BUK9K13-60RAX be used to replace an Infineon BSC093N04LS6 in a 48V motor drive application, and what design trade-offs should I consider?
Yes, the BUK9K13-60RAX can serve as a functional replacement for the Infineon BSC093N04LS6 in a 48V motor drive, but with important caveats. While both are logic-level N-channel MOSFETs rated for 60V, the BUK9K13-60RAX has a higher Rds(on) of 11.2mΩ at 10V Vgs compared to the BSC093N04LS6’s 3.7mΩ at 10V. This means higher conduction losses and thermal stress in high-current scenarios. Additionally, the dual-channel configuration of the BUK9K13-60RAX may require PCB layout changes if only a single FET was used previously. Ensure your gate driver can handle the slightly higher total gate charge (22.4nC vs ~18nC) and verify thermal performance under worst-case duty cycles. Use a heatsink or improved copper pour if junction temperatures approach 125°C during operation.
What are the key reliability risks when using the BUK9K13-60RAX in an automotive DC-DC converter exposed to load dump transients up to 40V?
The BUK9K13-60RAX is AEC-Q101 qualified and rated for 60V Vdss, making it suitable for automotive environments, but load dump events can exceed 40V and approach the device’s absolute maximum. The primary risk is voltage overshoot during inductive switching or transient events, which could push Vds beyond 60V if snubber circuits or TVS diodes are undersized. To mitigate this, implement a robust clamping strategy using a 58V TVS diode (e.g., SMAJ58A) close to the drain node and ensure minimal loop inductance in the power path. Also, monitor junction temperature—prolonged operation near 175°C TJ accelerates wear. Derate the continuous drain current by at least 20% under high ambient temperatures to preserve long-term reliability.
How does the dual N-channel configuration of the BUK9K13-60RAX impact half-bridge design compared to using two discrete MOSFETs like the Vishay SiSS34DN?
Using the BUK9K13-60RAX’s integrated dual N-channel FETs simplifies half-bridge layout by ensuring matched thermal and electrical characteristics between high-side and low-side switches, reducing timing skew and improving efficiency. However, it limits flexibility—you cannot independently optimize each FET for different current ratings or gate drive requirements. In contrast, discrete FETs like the Vishay SiSS34DN allow asymmetric sizing but require careful thermal management and PCB symmetry to avoid imbalance. The BUK9K13-60RAX also has a shared thermal pad in LFPAK56D, which improves heat spreading but demands a solid ground plane beneath. Ensure dead-time control in your driver accounts for the slightly higher gate charge (22.4nC) to prevent shoot-through, especially at switching frequencies above 100kHz.
Is the BUK9K13-60RAX suitable for paralleling in a high-current battery management system (BMS) requiring 80A continuous current, and what layout precautions are critical?
Paralleling two BUK9K13-60RAX devices can theoretically support 80A continuous current, but success depends heavily on layout and thermal symmetry. The LFPAK56D package has low thermal resistance, but mismatched trace lengths or unequal gate drive delays can cause current imbalance and localized overheating. Use identical, short gate traces with individual gate resistors (2–10Ω) per FET to dampen oscillations and ensure balanced turn-on/turn-off. Kelvin connections for source sensing are recommended to avoid parasitic inductance effects. Monitor both dies’ temperatures—even small differences in Rds(on) due to temperature gradients can lead to thermal runaway. Avoid paralleling more than two without extensive characterization; consider a single higher-current FET like the ON Semiconductor NVMFS5C628NL instead for better predictability.
What happens if the BUK9K13-60RAX is driven with a 3.3V logic signal in a 12V system, and how can I ensure full enhancement without exceeding safe operating area?
Driving the BUK9K13-60RAX with only 3.3V Vgs significantly increases Rds(on), potentially exceeding 30mΩ—nearly triple the specified 11.2mΩ at 10V—leading to excessive conduction losses and thermal runaway in high-current applications. Although it is a logic-level FET with Vgs(th) max of 2.1V, full enhancement requires at least 4.5–5V for reliable operation. In a 12V system, always use a gate driver that boosts Vgs to 10V to ensure low Rds(on) and safe SOA margin. If stuck with 3.3V logic, insert a dedicated MOSFET gate driver IC (e.g., TI UCC27517) between the microcontroller and the BUK9K13-60RAX to level-shift and amplify the gate signal. Never rely on direct MCU drive under continuous load; even pulsed operation may cause premature aging due to elevated junction temperatures.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
BUK9K13-60RAX CAD Models
Nexperia USA Inc. BUK9K13-60RAX PCB symbols & footprints
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