AT24HC02BN-SH-B >
AT24HC02BN-SH-B
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ 8SOIC
2224 Pcs New Original In Stock
EEPROM Memory IC 2Kbit I2C 1 MHz 550 ns 8-SOIC
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AT24HC02BN-SH-B Microchip Technology
5.0 / 5.0 - (206 Ratings)

AT24HC02BN-SH-B

Product Overview

1396562

DiGi Electronics Part Number

AT24HC02BN-SH-B-DG
AT24HC02BN-SH-B

Description

IC EEPROM 2KBIT I2C 1MHZ 8SOIC

Inventory

2224 Pcs New Original In Stock
EEPROM Memory IC 2Kbit I2C 1 MHz 550 ns 8-SOIC
Memory
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.6294 0.6294
  • 200 0.2521 50.4200
  • 500 0.2436 121.8000
  • 1000 0.2392 239.2000
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AT24HC02BN-SH-B Technical Specifications

Category Memory, Memory

Manufacturer Microchip Technology

Packaging -

Series -

Product Status Obsolete

DiGi-Electronics Programmable Verified

Memory Type Non-Volatile

Memory Format EEPROM

Technology EEPROM

Memory Size 2Kbit

Memory Organization 256 x 8

Memory Interface I2C

Clock Frequency 1 MHz

Write Cycle Time - Word, Page 5ms

Access Time 550 ns

Voltage - Supply 1.8V ~ 5.5V

Operating Temperature -40°C ~ 85°C (TA)

Mounting Type Surface Mount

Package / Case 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package 8-SOIC

Base Product Number AT24HC02

Datasheet & Documents

HTML Datasheet

AT24HC02BN-SH-B-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051

Additional Information

Other Names
AT24HC02BN-10SU-1.8
AT24HC02BN-10SU-1.8-DG
Standard Package
100

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
34AA02-E/SN
Microchip Technology
2224
34AA02-E/SN-DG
0.1379
MFR Recommended
24AA02T/SN
Microchip Technology
2734
24AA02T/SN-DG
0.2415
MFR Recommended
BR24G02FJ-3GTE2
Rohm Semiconductor
24932
BR24G02FJ-3GTE2-DG
0.0642
MFR Recommended
BR24A02F-WME2
Rohm Semiconductor
2783
BR24A02F-WME2-DG
0.1557
MFR Recommended
FT24C02A-USR-B
Fremont Micro Devices Ltd
894
FT24C02A-USR-B-DG
0.0886
MFR Recommended

Reviews

5.0/5.0-(Show up to 5 Ratings)
조***하늘
de desembre 02, 2025
5.0
고객 지원 팀이 매우 친절하고 전문적이며, 우리 회사의 문의에 신속하게 대응해줘서 큰 도움이 되었습니다.
清***流れ
de desembre 02, 2025
5.0
お値段もお手頃で、質も良いため非常に満足しています。
Swee***nrise
de desembre 02, 2025
5.0
DiGi Electronics offers excellent prices that make electronics accessible without compromising quality.
Lu***oul
de desembre 02, 2025
5.0
Real-time tracking makes receiving my orders hassle-free.
Pea***uest
de desembre 02, 2025
5.0
Customers appreciate their proactive approach to post-purchase support, which fosters long-term trust.
Vel***Sky
de desembre 02, 2025
5.0
DiGi Electronics offers prompt shipping options that allowed us to receive critical components just in time for our production deadline.
Grace***Waves
de desembre 02, 2025
5.0
Their commitment to sustainable packaging sets a wonderful example for the tech industry.
Sere***reams
de desembre 02, 2025
5.0
Timely delivery and product durability have always exceeded my expectations.
Pea***anda
de desembre 02, 2025
5.0
As a loyal customer, I can confidently say DiGi Electronics delivers consistent excellence.
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Frequently Asked Questions (FAQ)

Can the AT24HC02BN-SH-B be used as a drop-in replacement for the 24AA02T/SN in an existing I2C memory design, and what are the key compatibility risks?

The AT24HC02BN-SH-B can generally replace the 24AA02T/SN in most I2C designs, but engineers must verify timing and voltage compatibility. While both devices support 1 MHz I2C and 1.8V–5.5V supply, the AT24HC02BN-SH-B uses a faster 550 ns access time and may exhibit different bus loading characteristics. A critical design-in risk is ensuring the host controller's I2C timing budget accommodates any minor differences during read-after-write operations. Additionally, confirm identical I2C addressing—both parts use standard 1010x x00 format—but check if the 24AA02T/SN's internal MAC address feature (if used) requires migration. Always perform bus signal integrity checks, especially in noise-sensitive applications.

What design considerations should be taken when integrating the AT24HC02BN-SH-B in a wide voltage range system (1.8V to 5.5V) to ensure reliable EEPROM operation?

When integrating the AT24HC02BN-SH-B across 1.8V to 5.5V, ensure stable supply regulation and proper I/O voltage alignment with the host MCU. The device’s rail-to-rail I2C interface supports 1.8V logic thresholds, but at lower voltages, rise/fall times may slow, increasing susceptibility to noise. Use appropriate pull-up resistors (e.g., 2.2kΩ–10kΩ depending on bus capacitance) sized for worst-case 5.5V systems to avoid excessive current. Include bypass capacitance (0.1 µF) near the VCC pin to suppress switching transients, and validate EEPROM write cycles during brown-out conditions, as the 5ms page write time could be disrupted if the supply dips below 1.8V, risking corrupted data.

What are the implications of using the AT24HC02BN-SH-B in a high-reliability industrial system given its obsolete product status?

Using the AT24HC02BN-SH-B in new high-reliability industrial designs poses supply chain and lifecycle risks due to its obsolete status. While performance and temperature range (-40°C to 85°C) suit industrial environments, long-term availability is not guaranteed. Designers should assess obsolescence risk: if the product lifecycle exceeds 5 years, consider migrating to active-pin-compatible alternatives like the BR24G02FJ-3GTE2 or FT24C02A-USR-B. If retaining AT24HC02BN-SH-B, secure buffer stock and verify firmware error handling (CRC, retry logic) to compensate for potential future component aging or batch variability in reliability.

How does the 5ms write cycle time of the AT24HC02BN-SH-B impact real-time I2C system performance, and what are the best practices to avoid bus lock-up?

The AT24HC02BN-SH-B’s 5ms write cycle introduces a blocking period during which the device does not acknowledge I2C bus requests—potentially stalling communication in real-time systems. To prevent bus lock-up, firmware must implement polling with timeout protection: after initiating a write, the host should send repeated START conditions (address + R/W bit) every 1–2ms until the EEPROM acknowledges, instead of assuming fixed delay. Avoid tight delay loops that may freeze other tasks. Additionally, use page writes (up to 16 bytes) efficiently to minimize total write operations and reduce total system latency. Always debounce I2C bus errors using controller-level recovery (e.g., SCL toggling) in case of unexpected NACKs.

What are the reliability risks when using the AT24HC02BN-SH-B in high-cycle write applications, and how does it compare to the BR24A02F-WME2 in endurance-critical designs?

The AT24HC02BN-SH-B specifies 1 million write cycles endurance per byte, but in frequent-write applications (e.g., logging or calibration storage), uneven wear can exhaust specific addresses prematurely. Unlike the BR24A02F-WME2, which includes built-in wear-leveling features in some implementations, the AT24HC02BN-SH-B requires external firmware-level wear leveling to distribute writes across memory locations. Without this, hotspots may fail within months of continuous operation. Mitigate risk by minimizing unnecessary writes, using shadow buffers in RAM, and implementing write-coalescing algorithms. For endurance-critical systems, evaluate BR24A02F-WME2 or similar devices with enhanced cycle life or on-die management.

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