AT24C128C-SSHM-T >
AT24C128C-SSHM-T
Microchip Technology
IC EEPROM 128KBIT I2C 1MHZ 8SOIC
200312 Pcs New Original In Stock
EEPROM Memory IC 128Kbit I2C 1 MHz 550 ns 8-SOIC
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AT24C128C-SSHM-T Microchip Technology
5.0 / 5.0 - (455 Ratings)

AT24C128C-SSHM-T

Product Overview

1255172

DiGi Electronics Part Number

AT24C128C-SSHM-T-DG
AT24C128C-SSHM-T

Description

IC EEPROM 128KBIT I2C 1MHZ 8SOIC

Inventory

200312 Pcs New Original In Stock
EEPROM Memory IC 128Kbit I2C 1 MHz 550 ns 8-SOIC
Memory
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Minimum 1

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AT24C128C-SSHM-T Technical Specifications

Category Memory, Memory

Manufacturer Microchip Technology

Packaging Cut Tape (CT) & Digi-Reel®

Series -

Product Status Active

DiGi-Electronics Programmable Verified

Memory Type Non-Volatile

Memory Format EEPROM

Technology EEPROM

Memory Size 128Kbit

Memory Organization 16K x 8

Memory Interface I2C

Clock Frequency 1 MHz

Write Cycle Time - Word, Page 5ms

Access Time 550 ns

Voltage - Supply 1.7V ~ 5.5V

Operating Temperature -40°C ~ 85°C (TA)

Mounting Type Surface Mount

Package / Case 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package 8-SOIC

Base Product Number AT24C128C

Datasheet & Documents

HTML Datasheet

AT24C128C-SSHM-T-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051

Additional Information

Other Names
AT24C128C-SSHM-TCT-DG
150-AT24C128C-SSHM-TCT
150-AT24C128C-SSHM-TDKR
150-AT24C128C-SSHM-TTR
AT24C128C-SSHM-T-899DKR-DG
AT24C128C-SSHM-T-DKR-DG
AT24C128C-SSHM-TDKR-DG
AT24C128CSSHMT
AT24C128C-SSHM-T-899
AT24C128C-SSHM-T SL901CT-DG
AT24C128C-SSHM-TTR-DG
AT24C128C-SSHM-T SL901
AT24C128C-SSHM-T SL901DKR-DG
AT24C128C-SSHM-T SL901TR
AT24C128C-SSHM-T-899-DG
AT24C128C-SSHM-TDKR
AT24C128C-SSHM-T-DKR
AT24C128C-SSHM-TCT
AT24C128C-SSHM-T-899TR-DG
AT24C128C-SSHM-T SL901TR-DG
AT24C128C-SSHM-T-DG
AT24C128C-SSHM-TTR
AT24C128C-SSHM-T-899CT-DG
AT24C128C-SSHM-T SL901DKR
AT24C128C-SSHM-T SL901CT
Standard Package
4,000

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Reviews

5.0/5.0-(Show up to 5 Ratings)
Sonnenstr***enschützer
de desembre 02, 2025
5.0
Die schnelle Lieferung hat meine Erwartungen übertroffen, und der Support war wirklich hilfreich.
Spar***sion
de desembre 02, 2025
5.0
Their response to any product-related questions is always timely and helpful.
Gl***aze
de desembre 02, 2025
5.0
Customer service was exceptional, helping me troubleshoot an issue in a calm and professional manner.
Radia***Quest
de desembre 02, 2025
5.0
Support after purchase was detailed and easy to access, enhancing my overall experience.
Drea***Daze
de desembre 02, 2025
5.0
Every product I've received has been of outstanding quality.
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Frequently Asked Questions (FAQ)

What are the key design-in risks when using the AT24C128C-SSHM-T in a wide-voltage industrial system operating from 3.3V to 5V?

When designing in the AT24C128C-SSHM-T for systems that switch between 3.3V and 5V logic levels, ensure all connected I2C bus components are 5V-tolerant if operating at VDD = 5.5V, as the AT24C128C-SSHM-T input pins are not 5V-tolerant above 5.5V. Additionally, verify pull-up resistor values on SDA and SCL lines are recalculated for each supply level to maintain proper I2C signal integrity (rise time < 300 ns at 1 MHz). Use level shifters like the TXS0108E if interfacing with 3.3V-only microcontrollers in a 5V system to prevent damage and bus contention. Avoid floating inputs and ensure VDD ramp rate meets the minimum 0.1V/ms specified to prevent unintended write operations during power-up.

How does the write cycle timing of the AT24C128C-SSHM-T impact real-time data logging reliability in battery-powered applications?

The AT24C128C-SSHM-T has a maximum 5ms word/page write cycle time, which must be accounted for in battery-powered data logging systems to avoid data loss. During this internal write period, the device does not respond to bus traffic, so the host MCU must either poll the ACK or implement a timeout delay before subsequent I2C commands. In power-constrained designs, abrupt power loss during a write cycle can corrupt data. To mitigate this, use a supercapacitor or small backup battery to support VDD long enough to complete the write, or implement firmware write buffering with wear-leveling algorithms to reduce write frequency. Never assume immediate write completion after sending data.

Can the AT24C128C-SSHM-T reliably replace the CAT24C128WI-GT3 in high-noise automotive environments, and what are the critical differences?

The AT24C128C-SSHM-T can replace the CAT24C128WI-GT3 in most automotive applications, but attention must be paid to noise immunity and supply stability. The AT24C128C-SSHM-T offers better AC noise suppression and tighter VDD tolerance (1.7V start-up), making it more reliable in cold-crank scenarios compared to the CAT24C128. However, ensure PCB layout includes 100nF ceramic decoupling close to VDD pin and keep SDA/SCL traces short and away from high-current paths. The CAT24C128 has slightly faster addressing, but AT24C128C-SSHM-T’s 1MHz I2C and 550ns access time are sufficient for most event-triggered logging. Validate I2C communication with pull-ups as low as 1.8kΩ in noisy environments to maintain signal rise time margins.

What are the implications of using the AT24C128C-SSHM-T at its maximum 1MHz I2C speed with long cable runs in a factory automation setup?

Operating the AT24C128C-SSHM-T at 1MHz I2C over long cables (>30cm) increases risk of signal distortion and arbitration loss due to bus capacitance exceeding the 400pF I2C limit. At 1MHz, rise and fall times must be <120ns, which standard 4.7kΩ pull-ups cannot support over cable runs. Use active I2C buffers like the PCA9515B or reduce speed to 400kHz for runs >50cm. If high speed is critical, implement 1–2kΩ pull-ups with series termination resistors and shielded twisted-pair cables. Also, confirm that the host microcontroller has sufficiently fast GPIO drive strength to meet timing; otherwise, data corruption may occur undetected. Test under real load and temperature conditions before deployment.

How does the endurance and data retention of the AT24C128C-SSHM-T affect long-term field reliability in medical sensor calibration storage?

The AT24C128C-SSHM-T is rated for 1 million write/erase cycles and 200-year data retention at 25°C, but field reliability in medical sensors depends on usage patterns. Frequent calibration updates can exhaust endurance prematurely—e.g., 100 calibrations/day would use ~3.6% of cycle life per year. Implement wear leveling across memory pages to distribute writes. Also, note that data retention degrades at elevated temperatures: at 85°C, retention drops to ~20 years. For life-critical medical devices, log write counts and perform periodic EEPROM health checks. Avoid continuous polling during writes and ensure stable VDD to prevent bit corruption. Consider redundant storage in separate memory blocks for fail-safe recovery.

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