2N6661 Microchip Technology
4.9 / 5.0 - (361 Ratings)

2N6661

Product Overview

12788542

DiGi Electronics Part Number

2N6661-DG
2N6661

Description

MOSFET N-CH 90V 350MA TO39

Inventory

2914 Pcs New Original In Stock
N-Channel 90 V 350mA (Tj) 6.25W (Tc) Through Hole TO-39
Quantity
Minimum 1

Purchase and inquiry

RFQ (Request for Quotations)

You can submit your RFQ inquiry directly on the product detail page or RFQ page. Our sales team will respond to your request within 24 hours.

Payment method

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IMPORTANT NOTICE

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 19.3386 19.3386
  • 25 19.3386 483.4650
  • 100 19.3386 1933.8600
Better Price by Online RFQ.
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2N6661 Technical Specifications

Category FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Microchip Technology

Packaging Bag

Series -

Product Status Active

FET Type N-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 90 V

Current - Continuous Drain (Id) @ 25°C 350mA (Tj)

Drive Voltage (Max Rds On, Min Rds On) 5V, 10V

Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id 2V @ 1mA

Vgs (Max) ±20V

Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 24 V

FET Feature -

Power Dissipation (Max) 6.25W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Supplier Device Package TO-39

Package / Case TO-205AD, TO-39-3 Metal Can

Datasheet & Documents

HTML Datasheet

2N6661-DG

PCN Design/Specification

New DeviceDoc 30/Mar/2016

Environmental & Export Classification

RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
2N6661MC
Standard Package
500
DIGI Certification
Blogs & Posts