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JANTX2N3741
MACOM Technology Solutions
TRANS PNP 80V 4A TO66
1781 Pcs New Original In Stock
Bipolar (BJT) Transistor PNP 80 V 4 A 3 W Through Hole TO-66 (TO-213AA)
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JANTX2N3741 MACOM Technology Solutions
5.0 / 5.0 - (325 Ratings)

JANTX2N3741

Product Overview

12807896

DiGi Electronics Part Number

JANTX2N3741-DG
JANTX2N3741

Description

TRANS PNP 80V 4A TO66

Inventory

1781 Pcs New Original In Stock
Bipolar (BJT) Transistor PNP 80 V 4 A 3 W Through Hole TO-66 (TO-213AA)
Quantity
Minimum 1

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In Stock (All prices are in USD)
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  • 1 5.3854 5.3854
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JANTX2N3741 Technical Specifications

Category Transistors, Bipolar (BJT), Single Bipolar Transistors

Packaging -

Series -

Product Status Discontinued at Digi-Key

Transistor Type PNP

Current - Collector (Ic) (Max) 4 A

Voltage - Collector Emitter Breakdown (Max) 80 V

Vce Saturation (Max) @ Ib, Ic 600mV @ 1.25mA, 1A

Current - Collector Cutoff (Max) 10µA

DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA, 1V

Power - Max 3 W

Frequency - Transition -

Operating Temperature -65°C ~ 200°C (TJ)

Grade Military

Qualification MIL-PRF-19500/441

Mounting Type Through Hole

Package / Case TO-213AA, TO-66-2

Supplier Device Package TO-66 (TO-213AA)

Datasheet & Documents

HTML Datasheet

JANTX2N3741-DG

Environmental & Export Classification

RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
1657-1162
1657-1162-MIL
Standard Package
1

Reviews

5.0/5.0-(Show up to 5 Ratings)
Infini***orizons
de desembre 02, 2025
5.0
Speedy delivery and minimal, eco-focused packaging impressed me greatly.
Suns***eSoul
de desembre 02, 2025
5.0
The reliability of their products gives me peace of mind in my operations.
Bli***ound
de desembre 02, 2025
5.0
Their supportive customer service has always been available when I needed help.
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Frequently Asked Questions (FAQ)

Can JANTX2N3741 be used as a drop-in replacement for 2N3055 in high-temperature power supply designs and what are the key design-in risks?

The JANTX2N3741 is not a direct replacement for the 2N3055 due to critical differences in device architecture and ratings. While both are PNP transistors in TO-66 packages, the 2N3055 is typically NPN and rated for higher power dissipation (115W vs 3W). Attempting to substitute without circuit redesign risks thermal runaway and incorrect biasing. When designing with the JANTX2N3741, ensure proper derating above 55°C and verify compatibility with PNP-based regulator topologies. Always re-simulate the bias network and consider the lower current gain (hFE min 30) under light loads to avoid insufficient drive capability.

What are the primary reliability concerns when using JANTX2N3741 in aerospace applications near its 200°C junction temperature limit?

Although the JANTX2N3741 is qualified to MIL-PRF-19500/441 and rated for operation up to 200°C, sustained operation above 150°C accelerates junction degradation and increases risk of thermal runaway due to reduced hFE and increased leakage current. For aerospace applications, implement strict power derating—limit dissipation to below 1.5W even with heatsinking—and verify long-term stability through burn-in and accelerated life testing. Monitor Vce(sat) drift as an early failure indicator and avoid designs where ambient temperature exceeds 125°C without active cooling.

How does the RoHS non-compliant status of JANTX2N3741 impact new designs and what are the closest compliant alternatives?

The RoHS non-compliance of JANTX2N3741 limits its use in commercial or export-controlled designs and may violate environmental regulations in many markets. For new designs requiring military-grade reliability, consider qualified alternatives like the ON Semiconductor MJD31C (PNP, 100V, 3A, TO-220) or Diodes Inc. DMP3005L-7 (MOSFET-based solution). Note that physical footprint and drive requirements differ; thorough revalidation of PCB layout, thermal path, and switching speed is required. The JANTX2N3741 should only be used in legacy or exempted military repair programs.

What thermal management strategies are critical when integrating JANTX2N3741 in a dense through-hole power amplifier board?

Given the JANTX2N3741's 3W max power rating and through-hole TO-66 package, effective thermal management is essential in dense layouts. Use a minimum 400 mm² copper pad connected to the mounting tab with multiple vias to inner thermal planes. Avoid placing near other high-dissipation components and ensure airflow of at least 200 LFM for passive cooling. For continuous operation above 1A collector current, add a heatsink with thermal interface material; verify temperature rise via IR inspection during prototyping. Exceeding RθJA limits leads to premature parametric failure even below 200°C TJ.

When designing-in JANTX2N3741, how do its hFE and Vce(sat) characteristics affect performance in analog switching circuits compared to 2N3702?

The JANTX2N3741 has a lower minimum hFE (30 @ 250mA) and higher Vce(sat) (600mV @ 1A) than the 2N3702 (hFE min 100, Vce(sat) ~250mV), resulting in less efficient switching and higher power loss in analog control circuits. In relay drivers or linear regulators, this requires higher base drive current and worsens thermal performance. The JANTX2N3741’s military-grade ruggedness suits high-reliability systems, but if efficiency is critical, consider redesigning with a modern BJT or power MOSFET. Always simulate base resistor values to ensure full saturation under worst-case gain conditions.

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