IRGPS40B120UPBF >
IRGPS40B120UPBF
Infineon Technologies
IGBT 1200V 80A 595W SUPER247
16893 Pcs New Original In Stock
IGBT NPT 1200 V 80 A 595 W Through Hole SUPER-247™ (TO-274AA)
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IRGPS40B120UPBF Infineon Technologies
5.0 / 5.0 - (490 Ratings)

IRGPS40B120UPBF

Product Overview

12823012

DiGi Electronics Part Number

IRGPS40B120UPBF-DG
IRGPS40B120UPBF

Description

IGBT 1200V 80A 595W SUPER247

Inventory

16893 Pcs New Original In Stock
IGBT NPT 1200 V 80 A 595 W Through Hole SUPER-247™ (TO-274AA)
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 5.8380 5.8380
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IRGPS40B120UPBF Technical Specifications

Category Transistors, IGBTs, Single IGBTs

Manufacturer Infineon Technologies

Packaging -

Series -

Product Status Obsolete

IGBT Type NPT

Voltage - Collector Emitter Breakdown (Max) 1200 V

Current - Collector (Ic) (Max) 80 A

Current - Collector Pulsed (Icm) 160 A

Vce(on) (Max) @ Vge, Ic 3.71V @ 15V, 50A

Power - Max 595 W

Switching Energy 1.4mJ (on), 1.65mJ (off)

Input Type Standard

Gate Charge 340 nC

Td (on/off) @ 25°C -

Test Condition 600V, 40A, 4.7Ohm, 15V

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Package / Case TO-274AA

Supplier Device Package SUPER-247™ (TO-274AA)

Datasheet & Documents

HTML Datasheet

IRGPS40B120UPBF-DG

Environmental & Export Classification

Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
SP001540742
*IRGPS40B120UPBF
Standard Package
25

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
FGH40T120SMD-F155
onsemi
15568
FGH40T120SMD-F155-DG
4.8272
MFR Recommended
IGW40N65H5FKSA1
Infineon Technologies
1195
IGW40N65H5FKSA1-DG
1.6362
MFR Recommended
FGH40T120SMD
onsemi
19793
FGH40T120SMD-DG
0.0594
MFR Recommended

Reviews

5.0/5.0-(Show up to 5 Ratings)
Nuage***abond
de desembre 02, 2025
5.0
Réponse instantanée à mes requêtes, service client exemplaire.
Sof***nset
de desembre 02, 2025
5.0
I value how straightforward and transparent their pricing is, making shopping hassle-free.
Moon***dowMe
de desembre 02, 2025
5.0
I am always confident in my purchases due to their reliable standards.
Drea***aver
de desembre 02, 2025
5.0
Even after heavy use over weeks, the product's construction has held up wonderfully without any signs of wear.
Infi***eAura
de desembre 02, 2025
5.0
Their outstanding after-sales service ensures that we always feel supported and valued.
Skybo***Waves
de desembre 02, 2025
5.0
Their support team’s professionalism has strengthened our partnership.
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Frequently Asked Questions (FAQ)

What are the key design risks when using IRGPS40B120UPBF in a high-temperature industrial application near 150°C junction temperature?

When operating the IRGPS40B120UPBF near its maximum junction temperature of 150°C, thermal runaway and reduced long-term reliability are significant risks. Ensure robust thermal management through low-thermal-resistance heatsinking and consider derating the device above 125°C ambient. Monitor Vce(on) over time as it can drift with degradation. Use proper gate driving (15V ±10%) to minimize conduction losses, and verify SOA compliance under overload conditions. Due to its NPT IGBT architecture, it has positive temperature coefficient at high currents, aiding parallel operation but requiring careful dynamic balancing.

Can IRGPS40B120UPBF be directly replaced with FGH40T120SMD in an existing motor drive inverter design?

Replacing IRGPS40B120UPBF with FGH40T120SMD requires caution despite similar voltage/current ratings. The FGH40T120SMD uses a different package (SMD) and has softer switching characteristics, affecting EMI and gate drive design. Gate charge is lower (~270nC vs 340nC), so existing gate drivers may overdrive, increasing EMI. Also, the FGH40T120SMD has better short-circuit immunity but lower peak pulse current. Redesign thermal and PCB layouts due to surface-mount vs through-hole. Validate switching waveforms and thermal performance in-circuit before full-scale replacement.

How does the obsolescence of IRGPS40B120UPBF impact long-term product design and supply chain planning?

The IRGPS40B120UPBF is marked as obsolete, posing risks for long-term product support and manufacturing continuity. While there is stock available now (16,814 units), future availability is uncertain. Designers should immediately seek end-of-life (EOL) notices from Infineon and consider drop-in alternatives like IGW40N65H5FKSA1 with similar 1200V ratings. Plan redesigns for second-sourcing or evaluate newer SiC MOSFETs for improved efficiency. Stockpile quantities based on product lifecycle but avoid overstocking due to potential counterfeit risks in gray market sourcing.

What gate drive considerations are critical for minimizing turn-on and turn-off losses in IRGPS40B120UPBF?

To minimize switching losses in the IRGPS40B120UPBF, use a gate driver capable of delivering peak currents >2A to charge the 340nC gate charge quickly under 15V conditions. Select a gate resistor (typically 4.7Ω as per test condition) that balances switching speed and EMI; too low increases dv/dt and shoot-through risk, too high raises switching energy (1.4mJ on / 1.65mJ off). Use negative turn-off bias (-5 to -8V) for noise immunity in high-dI/dt environments. Place low-ESL decoupling capacitors near the gate driver and minimize gate loop inductance to prevent voltage overshoot.

Is IRGPS40B120UPBF suitable for hard-switching applications in high-frequency induction heating systems above 20kHz?

The IRGPS40B120UPBF can operate in hard-switching applications up to ~30kHz, but performance degrades above 20kHz due to increasing switching losses (1.4mJ on / 1.65mJ off at 600V, 40A). At higher frequencies, thermal dissipation becomes a limiting factor even with aggressive cooling. Ensure operating within safe operating area (SOA) during turn-off with snubbers if needed. For >20kHz systems, consider newer trench-type IGBTs or SiC MOSFETs like IGW40N65H5FKSA1 for better efficiency. Simulate junction temperature cycling to avoid premature failure from thermal fatigue.

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