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IRFP048NPBF
Infineon Technologies
MOSFET N-CH 55V 64A TO247AC
17177 Pcs New Original In Stock
N-Channel 55 V 64A (Tc) 140W (Tc) Through Hole TO-247AC
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5.0 / 5.0
- (356 Ratings)
IRFP048NPBF
Product Overview
12806446
DiGi Electronics Part Number
IRFP048NPBF-DGManufacturer
Infineon Technologies
IRFP048NPBF
Description
MOSFET N-CH 55V 64A TO247ACInventory
17177 Pcs New Original In Stock
N-Channel 55 V 64A (Tc) 140W (Tc) Through Hole TO-247AC
Quantity
Minimum 1
Minimum 1
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IRFP048NPBF Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Datasheet & Documents
Design Resources
IRFP048N Saber Model
HTML Datasheet
IRFP048NPBF-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SP001567000
*IRFP048NPBF
Standard Package
400
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
배송이 늘 정시에 도착하며, 고객 지원이 매우 믿음직스럽습니다.
de desembre 02, 2025
Overall, DiGi Electronics provides durable, reliable products at prices that are hard to beat.
de desembre 02, 2025
My order arrived earlier than expected, showcasing their efficient logistics.
de desembre 02, 2025
Their inventory is always sufficient, allowing us to plan our procurement without concern.
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Frequently Asked Questions (FAQ)
Can I replace the obsolete IRFP048NPBF with the IRFP3306PBF in a high-current motor drive application without redesigning the gate drive circuit?
Replacing the IRFP048NPBF with the IRFP3306PBF is possible but requires careful evaluation of gate drive compatibility. While both are 55V N-channel MOSFETs in TO-247 packages, the IRFP3306PBF has a significantly lower Rds(on) (8.7 mΩ vs. 16 mΩ) and higher gate charge (110 nC vs. 89 nC). This means your existing gate driver must be capable of sourcing/sourcing enough current to charge the larger gate capacitance efficiently—especially at high switching frequencies. If your current driver was marginal for the IRFP048NPBF, it may cause excessive rise/fall times or shoot-through in half-bridge configurations with the IRFP3306PBF. Always simulate or test switching waveforms under load to verify safe operation and thermal performance before full deployment.
What thermal management risks should I consider when using the IRFP048NPBF near its 140W power dissipation limit in an enclosed industrial inverter?
Operating the IRFP048NPBF near its 140W (Tc) dissipation limit demands rigorous thermal design due to its junction-to-case thermal resistance (RθJC ≈ 0.89°C/W). In an enclosed environment, ambient temperature rise can drastically reduce effective heat sinking. You must ensure the case temperature (Tc) stays well below 100°C—ideally under 80°C—to maintain safe junction temperatures below 150°C. Use a high-performance heatsink with forced airflow, apply thermal interface material properly, and consider derating the device to ≤100W in practice. Monitor hot spots with thermal imaging during validation; localized heating from uneven mounting or poor solder joints can lead to premature failure even if average dissipation seems acceptable.
Is the IRFP048NPBF suitable for synchronous rectification in a 48V DC-DC converter, and how does its body diode performance compare to modern alternatives?
The IRFP048NPBF is not ideal for synchronous rectification due to its relatively slow and lossy intrinsic body diode, which exhibits high reverse recovery charge (Qrr)—a trait common in older HEXFET® technology. In a 48V synchronous buck or forward converter, this leads to significant switching losses and potential cross-conduction during dead time. Modern alternatives like the IRFP3306PBF or Infineon’s OptiMOS™ series offer much faster body diodes and lower Qrr. If you must use the IRFP048NPBF, increase dead time carefully and consider adding external Schottky diodes in parallel to clamp reverse recovery spikes. However, for efficiency-critical designs, migrating to a newer MOSFET with superior diode characteristics is strongly recommended.
How does the IRFP048NPBF’s ±20V gate-source voltage rating impact reliability when driven by a 12V gate driver in noisy industrial environments?
Although the IRFP048NPBF tolerates up to ±20V Vgs, operating it with a 12V gate drive introduces reliability concerns in electrically noisy settings. The higher gate voltage (vs. the typical 10V spec) improves Rds(on) marginally but increases susceptibility to gate oxide stress over time—especially if voltage transients from inductive loads or ground bounce exceed 15–18V. To mitigate risk, use a gate resistor (typically 4.7–10Ω) to dampen ringing, add a low-capacitance TVS diode (e.g., SMAJ15A) between gate and source, and ensure tight PCB layout with minimal loop area. Never rely solely on the absolute maximum rating; design for a 20–30% safety margin on Vgs in harsh environments to extend operational life.
Can I parallel two IRFP048NPBF devices to handle >100A continuous current in a battery management system, and what layout precautions are critical?
Paralleling two IRFP048NPBF MOSFETs can theoretically support >100A, but dynamic current sharing is highly sensitive to layout asymmetry and gate drive timing. Even small differences in trace inductance or resistance can cause one device to carry disproportionately more current during switching transitions, leading to thermal runaway. To ensure balanced operation, use a single gate driver with individual gate resistors for each MOSFET, maintain symmetrical copper paths for drain and source connections, and mount both devices on the same thermally coupled heatsink. Include Kelvin source connections if possible to stabilize gate drive. Validate current sharing with a current probe under full-load transient conditions—static DC sharing may look balanced while dynamic imbalance causes premature failure.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
IRFP048NPBF CAD Models
Infineon Technologies IRFP048NPBF PCB symbols & footprints
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