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IRAM336-025SB
Infineon Technologies
IC HYBRID 3PH INV 2A 500V SIP-S
17780 Pcs New Original In Stock
Power Driver Module MOSFET 3 Phase 500 V 2 A 19-PowerSSIP Module, Formed Leads
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5.0 / 5.0
- (416 Ratings)
IRAM336-025SB
Product Overview
6943623
DiGi Electronics Part Number
IRAM336-025SB-DGManufacturer
Infineon Technologies
IRAM336-025SB
Description
IC HYBRID 3PH INV 2A 500V SIP-SInventory
17780 Pcs New Original In Stock
Power Driver Module MOSFET 3 Phase 500 V 2 A 19-PowerSSIP Module, Formed Leads
Quantity
Minimum 1
Minimum 1
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IRAM336-025SB Technical Specifications
Category
Power Driver Modules
Packaging
-
Series
iMOTION™
Product Status
Obsolete
Type
MOSFET
Configuration
3 Phase
Current
2 A
Voltage
500 V
Voltage - Isolation
-
Mounting Type
Through Hole
Package / Case
19-PowerSSIP Module, Formed Leads
Datasheet & Documents
HTML Datasheet
IRAM336-025SB-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.39.0001
Additional Information
Other Names
SP001536858
Standard Package
300
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
I appreciate how budget-friendly their prices are for premium products.
de desembre 02, 2025
I was impressed with how easy it was to browse and order through their website.
de desembre 02, 2025
Shipping delays are rare, and when they happen, communication is excellent.
de desembre 02, 2025
Timely shipments allow me to plan my work efficiently.
de desembre 02, 2025
Trustworthy brand with consistently high standards in both products and customer care.
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Frequently Asked Questions (FAQ)
When replacing a failed IRAM336-025SB in an existing motor drive design, what are the critical compatibility checks I must perform, especially regarding its obsolete status?
As the IRAM336-025SB is obsolete, direct replacement is risky. First, verify the original gate drive circuit: this is a hybrid integrated power module with built-in bootstrap diodes and protection, not a discrete MOSFET package. Pin-for-pin replacements are rare. Your primary risks are differences in bootstrap capacitor sizing (original spec optimized for 2A/500V) and undervoltage lockout (UVLO) thresholds. For a safe design-in, consider Infineon's CIPOS™ Mini series (e.g., IRAM336-026SB if available) or migrate to a newer iMOTION™ IPM like the IMM100 series, but note that PCB layout, heatsinking, and control logic (3.3V vs 5V) must be revalidated. Always compare the switching loss characteristics (Eon/Eoff) under your actual PWM frequency and load current to avoid thermal overstress.
For a new low-power inverter design (≤1.5A RMS), are there significant reliability trade-offs using the obsolete IRAM336-025SB versus a modern discrete MOSFET solution?
Using the IRAM336-025SB for a new design carries two major reliability trade-offs. First, as an obsolete part, the supply chain risk (counterfeits, end-of-life discontinuation) directly impacts long-term production. Second, while this 2A/500V SIP module offers compact integration (pre-matched MOSFETs, bootstrap diodes, and LVIC), modern discrete solutions (e.g., using 600V CoolMOS™ or OptiMOS™ with separate gate driver ICs) often provide better thermal impedance per dollar because heat is spread across multiple discrete packages rather than concentrated in the SIP's single heatsink tab. However, if your priority is ultra-compact layout with high vibration resistance, the IRAM336-025SB’s single through-hole mounting is advantageous. To mitigate reliability, derate the current by 20-30% from its 2A rating and ensure the heatsink maintains case temperature below 100°C to compensate for the older silicon technology's higher Rds(on) temperature coefficient.
In a 3-phase inverter for a 300V DC bus application, how do I accurately size the bootstrap capacitor for the IRAM336-025SB to prevent under-voltage shutdown during high PWM duty cycles?
The IRAM336-025SB’s integrated high-voltage IC (HVIC) requires precise bootstrap capacitor sizing to avoid UVLO faults at high modulation index. The non-obvious risk is that the capacitor must supply charge for both the MOSFET gate and the internal level-shifter quiescent current during the high-side on-time. For a typical 300V bus with 16kHz PWM, a 10µF to 22µF low-ESR ceramic capacitor (X7R) per phase is recommended, but you must calculate based on the maximum on-time (e.g., 0.98 modulation). The formula is Cboot ≥ (Qg_total + I_qbs * t_on_max) / ΔV, where Qg_total is the total gate charge of the internal MOSFETs (~12nC typical), and ΔV is the allowable ripple (≤0.5V). A common design mistake is using a capacitor with too high ESR (like aluminum electrolytic) which causes voltage droop during the bootstrap refresh cycle, leading to intermittent high-side shutdowns that are difficult to debug. Place the capacitor within 5mm of the VB and VS pins.
Can I directly replace a competitor's SIP-IPM like the Mitsubishi PS21964 or STMicroelectronics STGIPL14K60 with the Infineon IRAM336-025SB without PCB redesign?
No, direct replacement is not possible without PCB redesign. Although the IRAM336-025SB and competitors like the Mitsubishi PS21964 (3A/600V) or STGIPL14K60 (3A/600V) share a similar 19-pin SIP form factor, the pin assignments, internal bootstrap diode connections, and fault reporting logic are not standardized. Specifically, the IRAM336-025SB uses a single fault output with an internal pull-up, whereas the PS21964 may have different fault clear timing. Additionally, the thermal pad dimensions and mounting hole positions vary, meaning your mechanical heatsink interface would require re-machining. If your application is space-constrained, the IRAM336-025SB offers a slightly lower Rds(on) (typically <4.5Ω at 25°C) compared to the PS21964's IGBT-based saturation voltage, so a parametric replacement would require verifying that the original driver’s dead-time (typically 1-2µs) is sufficient to prevent shoot-through in the IRAM336-025SB’s MOSFETs.
The IRAM336-025SB datasheet specifies 500V but my DC bus occasionally sees 390V spikes. What is the real-world safe operating margin for repetitive voltage transients in this obsolete module?
For the IRAM336-025SB, the 500V rating is the absolute maximum V_DSS for the internal MOSFETs, with no room for repetitive avalanche. In a 390V DC bus system, switching transients (due to stray inductance in the bus bars or PCB layout) can easily exceed 500V by 10-20%, causing avalanche breakdown and cumulative degradation. Since this is an obsolete hybrid module with monolithic MOSFETs, the avalanche energy (E_AS) is limited to approximately 10-15mJ typically. To ensure reliability, you must clamp the DC bus to ≤420V under all conditions and add a snubber (RC or RCD) across the DC+ and DC- terminals, designed to damp ringing frequency. A common design guideline is to maintain a minimum 20% voltage derating for obsolete parts; therefore, limit the nominal bus to 400V. Use a high-bandwidth differential probe to verify that the spike at the module pins stays below 480V under maximum load and PWM switching to avoid latent failures.
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IRAM336-025SB CAD Models
Infineon Technologies IRAM336-025SB PCB symbols & footprints
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