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IPP041N12N3GXKSA1
Infineon Technologies
MOSFET N-CH 120V 120A TO220-3
200457 Pcs New Original In Stock
N-Channel 120 V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3
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5.0 / 5.0
- (94 Ratings)
IPP041N12N3GXKSA1
Product Overview
12803539
DiGi Electronics Part Number
IPP041N12N3GXKSA1-DGManufacturer
Infineon Technologies
IPP041N12N3GXKSA1
Description
MOSFET N-CH 120V 120A TO220-3Inventory
200457 Pcs New Original In Stock
N-Channel 120 V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3
Quantity
Minimum 1
Minimum 1
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IPP041N12N3GXKSA1 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tube
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
211 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13800 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP041
Datasheet & Documents
HTML Datasheet
IPP041N12N3GXKSA1-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SP000652746
IPP041N12N3 G
IPP041N12N3 G-DG
IPP041N12N3GXKSA1-DG
448-IPP041N12N3GXKSA1
IPP041N12N3G
Standard Package
50
Reviews
5.0/5.0-(Show up to 5 Ratings)
de desembre 02, 2025
쇼핑 경험이 정말 뛰어나고, 제품의 내구성도 좋아서 추천합니다.
de desembre 02, 2025
Die Betreuung nach dem Kauf bei DiGi Electronics war vorbildlich. Bei einem Problem wurde mir umgehend eine Lösung angeboten.
de desembre 02, 2025
信頼できるサポートで、製品の長寿命化に役立っています。
de desembre 02, 2025
Their affordable prices make it easy to get dependable electronics without breaking the bank.
de desembre 02, 2025
Order tracking is seamless, providing real-time updates on delivery status.
de desembre 02, 2025
The entire delivery process, from packaging to logistics updates, was top-tier.
de desembre 02, 2025
Their packaging materials seem to be specially chosen to withstand rough handling, safeguarding my goods.
de desembre 02, 2025
The navigation experience is fluid, making shopping stress-free.
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Frequently Asked Questions (FAQ)
What are the key design-in risks when using the IPP041N12N3GXKSA1 in a high-temperature power supply and how can thermal runaway be prevented?
When designing in the IPP041N12N3GXKSA1 for high-temperature environments, the primary risk is thermal runaway due to its high power dissipation capability (300W @ Tc). Although the IPP041N12N3GXKSA1 has a junction temperature rating up to 175°C, improper heatsinking can cause localized overheating, especially under continuous 120A drain current. To mitigate this, ensure sufficient PCB copper area or external heatsink with low thermal resistance (<1°C/W). Use a thermal interface material and consider active cooling if ambient exceeds 85°C. Monitor junction temperature via thermal modeling and derate Id current above 100°C to maintain reliability. Also, leverage the positive temperature coefficient of Rds(on) by parallel configurations if needed, ensuring matched gate drive to avoid current imbalance.
Can the IPP041N12N3GXKSA1 replace the IRF1404 in a 12V motor drive application, and what design adjustments are required?
Yes, the IPP041N12N3GXKSA1 can effectively replace the IRF1404 in 12V motor drives, offering lower Rds(on) (4.1mΩ vs. 4.7mΩ) and higher current rating (120A vs. 106A), improving efficiency and thermal performance. However, the IPP041N12N3GXKSA1 has higher gate charge (211nC vs. 160nC), which increases switching losses. To compensate, upgrade the gate driver to handle higher peak current (e.g., TC4427 or UCC27324) and reduce gate resistor value to maintain fast turn-on/off. Also, verify the PCB layout for reduced parasitic inductance to prevent voltage spikes during fast switching. Ensure Vgs does not exceed ±20V during transient events, especially in inductive loads.
How does the IPP041N12N3GXKSA1 perform in parallel configurations for high-current applications, and what layout considerations minimize imbalance?
The IPP041N12N3GXKSA1 is well-suited for parallel operation due to its positive temperature coefficient of Rds(on), promoting current sharing. However, mismatches in gate drive loop inductance or PCB thermal gradients can lead to current hogging. To minimize imbalance, use symmetrical layout with identical trace lengths and widths for gate and source paths. Employ individual gate resistors (5–10Ω) for each MOSFET to damp ringing and equalize turn-on delay. Use Kelvin source connections if available, and maintain uniform heatsinking across devices. Avoid shared gate traces; instead, route from driver to each gate separately. Thermal coupling on the heatsink improves long-term balance.
What are the critical reliability concerns when operating the IPP041N12N3GXKSA1 near its maximum 120V Vdss rating in inductive load switching?
Operating the IPP041N12N3GXKSA1 near its 120V Vdss limit in inductive applications (e.g., motor controls or solenoid drivers) risks avalanche breakdown due to voltage spikes from di/dt effects. While the device has robust ruggedness, repeated unclamped inductive switching can degrade long-term reliability. Always include snubber circuits or TVS diodes (e.g., 150V transient suppressors) to clamp voltage overshoot. Ensure the drain-source voltage never exceeds 120V under transient conditions, including ringing. Use fast-body diodes or external freewheeling diodes to reduce stress. Verify waveforms with oscilloscope under worst-case load and temperature to confirm voltage margin. Derating to 80% (96V max) is recommended for mission-critical systems.
How does the gate charge and input capacitance of the IPP041N12N3GXKSA1 affect switching efficiency in a 100kHz synchronous buck converter?
The IPP041N12N3GXKSA1 has high input capacitance (Ciss = 13800 pF @ 60V) and gate charge (Qg = 211nC @ 10V), which increases switching losses in a 100kHz buck converter. This leads to higher energy consumption per cycle (E = Qg × Vgs × fsw), resulting in approximately 2.11W gate drive loss at 10V drive. To maintain efficiency, use a low-impedance gate driver capable of sourcing/sinking >2A peak current. Minimize gate loop inductance with short, wide PCB traces. Consider reducing Vgs to 10V (not higher) to avoid unnecessary losses, and use a bootstrap circuit for high-side drive. For better efficiency at high frequency, evaluate lower-Qg alternatives like the Infineon IPP050N12N3, but verify Rds(on) trade-offs for conduction loss.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
IPP041N12N3GXKSA1 CAD Models
Infineon Technologies IPP041N12N3GXKSA1 PCB symbols & footprints
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