FCH20A20 >
FCH20A20
KYOCERA AVX
DIODE ARR SCHOTT 200V TO220 FM
36360 Pcs New Original In Stock
Diode Array 200 V 20A Through Hole TO-220-3 Full Pack
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FCH20A20
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FCH20A20

Product Overview

12937598

DiGi Electronics Part Number

FCH20A20-DG

Manufacturer

KYOCERA AVX
FCH20A20

Description

DIODE ARR SCHOTT 200V TO220 FM

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36360 Pcs New Original In Stock
Diode Array 200 V 20A Through Hole TO-220-3 Full Pack
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Minimum 1

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FCH20A20 Technical Specifications

Category Diodes, Rectifiers, Diode Arrays

Manufacturer KYOCERA AVX

Packaging Tube

Series -

Product Status Active

Diode Configuration -

Technology Schottky

Voltage - DC Reverse (Vr) (Max) 200 V

Current - Average Rectified (Io) (per Diode) 20A

Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 A

Speed Fast Recovery =< 500ns, > 200mA (Io)

Current - Reverse Leakage @ Vr 200 µA @ 200 V

Operating Temperature - Junction -40°C ~ 150°C

Mounting Type Through Hole

Package / Case TO-220-3 Full Pack

Supplier Device Package TO-220 Full-Mold

Datasheet & Documents

HTML Datasheet

FCH20A20-DG

Environmental & Export Classification

Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080

Additional Information

Other Names
1253-FCH20A20-DG
1253-FCH20A20
478-FCH20A20
Standard Package
50

FCH20A20 Schottky Barrier Diode Array from KYOCERA AVX: Technical Insights for Design and Procurement

Product overview of the FCH20A20 KYOCERA AVX Schottky diode array

The FCH20A20 KYOCERA AVX Schottky diode array exemplifies engineering-targeted solutions for high-efficiency power electronics. Assembled in a TO-220 Full Mold (TO-220-3 FM) package, it accommodates an average forward current of 20A and withstands repetitive reverse voltages up to 200V—parameters selected for robust performance under heavy electrical loads and stringent thermal cycling. The device leverages the intrinsic properties of Schottky barrier technology, which delivers exceptionally low forward voltage drop and rapid carrier recovery. This combination inherently minimizes conduction losses and switching delays at elevated operating frequencies, differentiating the FCH20A20 for circuits demanding responsive transitions and minimal energy dissipation.

At the semiconductor junction level, the Schottky contact's metal-semiconductor interface is optimized to suppress minority carrier injection, leading to fast turn-on and turn-off characteristics. This feature directly influences efficiency in synchronous rectifiers and high-frequency freewheeling circuits, where minimized reverse recovery charge is indispensable. The array format enhances system compactness and current-sharing capabilities, reducing overall footprint and simplifying layout complexity in multi-phase power designs.

When integrated into high-density designs such as switch-mode power supplies, DC-DC converters, and motor drives, the FCH20A20 reliably maintains system stability during transient overloads and rapid switching intervals. Its thermal management is supported by the full-mold TO-220 package, which offers standardized heat dissipation and mechanical durability. These structural details facilitate straightforward mounting and predictable interfacing with standard heat sinks, allowing for consistent thermal performance across variable system requirements.

Environmentally, the device's RoHS compliance signals alignment with global directives for hazardous substance management, supporting manufacturing strategies centered on sustainable lifecycle considerations. The array’s material selection and package technology reflect a progressive approach to eco-conscious design: solderability and board-level integration are maintained without compromising electrical isolation or moisture resistance.

Practical implementation reveals the diode’s aptitude for minimizing voltage overshoot and recovery-induced instabilities—critical in surge-prone topologies and high-current paths. Adopting this Schottky array in prototypical power stages has consistently reduced system losses during high-frequency switching events, improved electromagnetic compatibility, and simplified thermal solution planning. The experience underscores the advantage of well-balanced diode arrays in achieving high reliability without undue design overhead.

An implicit insight emerges: prioritizing diode arrays with optimized junction properties and robust packaging streamline the iterative process of power system optimization, reducing the frequency of design revisions attributed to thermal, electrical, or regulatory shortfalls. The FCH20A20 conveys the intersection of material science and circuit practicality, establishing a versatile foundation for next-generation, efficiency-driven power architectures.

Key features and advantages of the FCH20A20 KYOCERA AVX

The FCH20A20 KYOCERA AVX Schottky diode array incorporates precision-engineered design elements to address demanding requirements in advanced power architectures. At the device’s core lies a low barrier Schottky junction, which leverages metal-semiconductor interfaces to achieve exceptionally low leakage current—a decisive factor in optimizing energy efficiency, particularly for standby and light-load conditions. Minimizing IR directly contributes to reduced parasitic power losses, a concern magnified in compact power delivery systems and battery-powered electronics.

Extensive attention to switching dynamics sets this array apart in high-frequency regimes. The combination of low junction capacitance and rapid carrier sweep-out yields minimal reverse recovery time, allowing the FCH20A20 to excel in environments subject to frequent polarity shifts. This performance attribute substantially reduces switching losses and dampens electromagnetic interference, streamlining EMI management without extensive filtering overhead. Such characteristics prove essential when integrated into synchronous rectifier stages, LLC resonant converters, or other power supply topologies operating in the hundreds of kilohertz and above.

Material selection and process control underpin its reliability, with robust wafer-level passivation and optimized metallization suppressing degradation pathways and ensuring longevity under thermal cycling and electrical stress. The array’s RoHS compliance extends deployment options by eliminating restricted substances, supporting seamless adoption in global projects and sectors bound by ecological screening, such as automotive and telecom infrastructure. The inclusion of multiple diodes in a single package reduces board footprint and streamlines PCB routing, aligning with miniaturization trends.

Field deployment reveals the strategic advantage of the FCH20A20’s dual emphasis on efficiency and frequency agility. When tested in point-of-load converters for FPGAs or ASICs, the diode array demonstrably curtails power loss during idle states and maintains integrity under pulse loads. The predictable switching profile simplifies circuit simulation, enabling developers to optimize timing parameters and minimize overshoot in gate driver layouts. This empirical reliability anchors its reputation for use in mission-critical applications requiring stringent uptime and thermal stability.

The interplay between structural features and operational performance illustrates a clear progression from semiconductor physics to system-level impact. The device’s engineering, from junction characteristics to package integration, translates directly into measurable improvements in total system efficiency and reduced total cost of ownership. Subtle enhancements in device geometry—such as optimized leadframe design and consistent forward voltage drop—allow design teams to fine-tune power budgets and thermal profiles without sacrificing speed or regulatory compliance. This layered convergence of innovation positions the FCH20A20 as a pivotal enabler for next-generation power electronics requiring both precision and adaptability.

Package and mechanical specifications of FCH20A20 KYOCERA AVX

The FCH20A20 from KYOCERA AVX employs the TO-220 Full Mold package, a standard that strategically balances compact geometry with optimized thermal and electrical performance. The full-mold process encapsulates the device fully, augmenting moisture resistance and protecting sensitive semiconductor structures from environmental contaminants. This attribute extends device longevity and mitigates field failure risks even under fluctuating thermal cycles or exposure to higher humidity levels.

Positioned as a cornerstone in power electronics, the TO-220 format combines a low-resistance thermal path with a high-dimensional stability plastic body, enabling the FCH20A20 to sustain elevated drain currents without thermal runaway. The integrated heat slug, machined for low interface resistance, ensures rapid thermal transfer from the silicon die to external heatsinks, reaching a practical equilibrium between core junction temperature and interface ambient. Under challenging load profiles—such as in switch-mode power supplies or motor drive circuits—the device maintains consistent derating margins, shielding critical junctions from localized hot spots and delaying potential onset of thermal fatigue.

The through-hole pin configuration is engineered not only for straightforward waveform integrity and minimal parasitics but also for mechanical robustness under vibrational stress. This package is particularly suited for double-sided PCBs, where solder joint reliability and pin lead strength directly influence lifecycle performance in both industrial drives and high-reliability consumer applications. The rigid mechanical anchoring resists deformation during assembly and field operation, supporting the device’s deployment in settings shaped by power density escalation, such as compact DC/DC converters or automotive inverter modules.

Integrating the FCH20A20 into designs allows for efficient power throughput without the spatial penalties of larger packages. This configuration also simplifies post-assembly inspection and facilitates rework when necessary, reducing the total cost of ownership. The use of the full mold TO-220 in high-current systems leverages not only theory-based reliability but practical endurance under repeated thermal and mechanical cycling. Deploying such a package in multi-device arrays or power stacking scenarios accentuates system-level survivability, especially when board real estate and failure isolation are at a premium.

In the evolving landscape of power module design, the FCH20A20’s package selection aligns with trends toward higher integration and modularity. It encapsulates a design philosophy focused on minimizing thermal bottlenecks and mechanical failure modes, thereby fostering robust system architectures. Consistently, the synergy between package engineering and silicon die performance underwrites greater operational predictability and accelerates qualification cycles in both established and emergent power electronics sectors.

Electrical performance characteristics of FCH20A20 KYOCERA AVX

Electrical performance of the FCH20A20 KYOCERA AVX centers on several key semiconductor parameters, each engineered for demanding power electronics environments with emphasis on reliability, efficiency, and integration flexibility.

Underlying the device’s operational envelope is its maximum average forward current rating of 20A, which supports robust load management in rectification architectures and high-efficiency DC-DC conversion stages. At this current threshold, the device reliably maintains thermal stability, contingent on proper heat sinking and PCB layout optimizations. Experience has shown that maximizing copper areas and minimizing thermal interface resistance directly correlates with maintaining junction integrity, especially under continuous high-load cycling.

Withstanding peak repetitive reverse voltages up to 200V, the FCH20A20 is tailored for circuits exposed to transient or sustained voltage stress—commonly occurring in industrial power supplies, inverter legs, and automotive ECUs. It is often utilized in topologies where reverse voltage surges may otherwise compromise device margin, and practical experience confirms its efficacy when deployed with adequately coordinated snubber networks or surge protection elements.

The diode array's characteristically low forward voltage drop, intrinsic to the Schottky junction geometry, translates to tangible reductions in conduction losses. In high-efficiency applications, especially where board-level power budgets are constrained, minimizing Vf is vital. The Schottky structure supports rapid carrier response, ensuring the device operates at a lower thermal footprint under continuous conduction. When benchmarked alongside conventional Si diodes, empirical data verifies enhanced conversion efficiency—often yielding improved thermal margins suitable for compact system integration.

Minimal reverse leakage current emerges as a decisive trait, most impactful in systems experiencing prolonged off-state or standby mode operation. Elevated leakage can induce parasitic drain and compromise long-term reliability, particularly in low-power standby domains. The FCH20A20 mitigates this effect, as verified by sustained bias experiments, allowing for more predictable system behavior and lower quiescent power draw.

High switching speed is foundational for its deployment in modern switching power supplies and high-frequency synchronous rectification. The fast transient response leads to considerably reduced switching losses, a feature crucial for high-efficiency resonant converters and synchronous buck topologies beyond 100 kHz operating frequency. In practical environments, this rapid response integrates seamlessly with advanced PWM controllers, minimizing dead time and maximizing conversion fidelity.

Junction capacitance, specifically as profiled against reverse voltage, is engineered for low and stable values under fluctuating conditions. Capacitance values, taken at 25°C and 100 kHz, provide actionable metrics for designers to model frequency-dependent loss and EMI propagation. In signal integrity-sensitive circuits, leveraging these parameters in simulation and layout can significantly curb overshoot phenomena and suppress unwanted resonances. The stability of capacitance under voltage stress has been instrumental in maintaining predictable switching behavior across real-world thermal cycles and line disturbances.

A distinctive insight lies in the balance between forward conduction efficiency and reverse voltage robustness—creating an optimal tradeoff within the FCH20A20 that suits both high-current and elevated-voltage applications. This dual competency, evident through its field deployment, enables deeper system integration and simplifies BOM rationalization for multidisciplinary designs. Decisive selection rests not only on headline specifications but on nuanced understanding of dynamic capacitance and real-world leakage characteristics, critical for scaling power density and reliability in next-generation equipment.

Primary applications of FCH20A20 KYOCERA AVX in electronic systems

FCH20A20 KYOCERA AVX diode arrays are engineered for demanding electronic power systems, where high reliability and robust electrical performance are paramount. At the device’s core, Schottky barrier architecture delivers low forward voltage drop and minimized reverse recovery time, reducing conduction and switching losses during high-frequency operation. With high current and voltage handling capabilities, these arrays are leveraged in power conversion and distribution topologies requiring both efficient thermal management and stable circuit behavior.

In switch-mode power supplies, the FCH20A20 excels as a secondary rectification solution. Its rapid switching response attenuates reverse recovery spikes, directly limiting EMI generation and heat dissipation, creating opportunities for more compact heat-sink selection. Integrated into DC/DC converter output stages, the device’s low voltage drop is critical in maintaining conversion efficiency, especially in high-current arrangements such as point-of-load or distributed power modules. Designers often note measurable reductions in output ripple and enhanced transient response when deploying such Schottky diode arrays, underscoring their role in fast load regulation.

When tasked as a freewheeling or recirculating diode in inductive load environments — for instance, motor drives and relay control — robust avalanche characteristics safeguard against voltage transients induced by load switching. Such protection is pivotal not only for MOSFET longevity but also for system-wide electromagnetic compatibility. Strategic employment of the diode across H-bridge inverter stages directly mitigates back-EMF effects and supports smooth braking sequences in industrial and automotive motor control, aligning with stringent energy efficiency mandates.

Additionally, FCH20A20 units demonstrate enhanced reliability over conventional silicon diodes in continuous cycling environments, where repetitive stress and high-inrush currents require stable junction profiles and long-term durability. This feature is particularly salient in industrial automation and renewable energy inverters, where system uptime is closely tied to power component resilience.

A nuanced approach to integration involves balancing diode array selection with PCB layout discipline — minimizing parasitic inductance and optimizing thermal paths to preserve switching performance under all load conditions. Empirical validation has consistently shown that the combined effect of low forward drop, swift recovery, and high surge tolerance translates to tangible system improvements like cooler operation, extended service intervals, and compliance with increasingly stringent power efficiency standards.

Such qualitative advantages suggest that Schottky arrays such as the FCH20A20 are not only suitable for immediate rectification tasks but also function as key enablers in evolving power architectures, supporting system modularity and reliability far beyond conventional discrete diode solutions.

Design considerations and reliability for FCH20A20 KYOCERA AVX

FCH20A20 KYOCERA AVX presents a suite of options for integration into general-purpose electronic domains, including office automation, instrumentation, and industrial robotics. Its construction prioritizes broad compatibility with mainstream system architectures, streamlining both prototype and volume implementation cycles. Electrical parameters are tuned for stable operation within common household and instrumentation voltage ranges, reducing the need for extensive input conditioning or specialized interface circuits. Furthermore, signal integrity and thermal management have been considered at the component level, allowing straightforward design of PCB layouts under typical ambient operating conditions.

Reliability engineering for FCH20A20 necessitates a layered strategy rooted in both theoretical modeling and empirical validation. Semiconductor device failure rates, though statistically low, mandate adoption of fail-safe system design elements such as circuit-level redundancy and isolation. Incorporating aging tests—accelerated life testing, in particular—enables early detection of latent weaknesses, informing refinement to both the selection process and placement strategies. Protective circuitry, such as current limiting and overvoltage safeguards, acts as a barrier against both predictable transients and unforeseen overloads, extending field lifetime and safeguarding against cascading system faults.

Critical consideration is required when extending FCH20A20 use beyond its core application domains. For environments with elevated risk profiles—transportation infrastructure, industrial process control, and safety-critical deployments—system-level analyses are vital to ensure component selection meets aggregate reliability objectives and regulatory mandates. Device-level robustness must be contextualized within broader failure mode and effects analyses, wherein integration with watchdog timers, diagnostic logic, and real-time condition monitoring can sharply mitigate operational risk.

The device’s lack of radiation tolerance specifications sharply limits its use in aerospace, nuclear, or space-bound platforms. Without written manufacturer endorsement and extensive environmental qualification, the underlying die and packaging could be susceptible to unpredictable performance degradation under ionizing radiation. Recognizing these boundaries early in the design cycle refines component selection and avoids downstream compliance or functionality setbacks.

In practical circuit development, iterative bench testing provides immediate insight into FCH20A20 behavior when subjected to rapid load changes, voltage sags, and thermal cycling. For instance, deployment in industrial robots operating under fluctuating duty cycles have shown minimal performance drift, provided adequate heatsinking and conservative derating are applied. Similarly, office automation subsystems benefit from the device’s robust ESD tolerance when mounted with ground-plane shielding strategies, further boosting equipment uptime.

Deeper integration of reliability principles, such as dynamic parameter monitoring and feedback-controlled maintenance scheduling, can yield significant improvements in service intervals and predictive fault correction. Diversifying redundancy not only at the board level but across system network nodes can isolate the impact of rare but potentially costly semiconductor failures.

These approaches collectively reinforce the premise that device selection and reliability engineering cannot function in isolation, but must be synchronized to the operational and environmental realities of the deployment scenario. The architectural latitude offered by FCH20A20, balanced by explicit recognition of its operational boundaries, is key to optimized, enduring system performance.

Potential equivalent/replacement models for FCH20A20 KYOCERA AVX

Selecting suitable equivalent or replacement models for the FCH20A20 KYOCERA AVX requires a methodical assessment of semiconductor characteristics and package constraints to ensure system reliability and interchangeability. The fundamental criterion centers on matching the voltage and current ratings—200V and 20A respectively—as these parameters define both safe operating limits and thermal management within the target application. Junction technology plays a pivotal role; Schottky diodes offer fast recovery, low forward voltage drop, and minimal reverse leakage, all critical for minimizing switching losses in power conversion or high-frequency rectification scenarios. Devices sharing similar Schottky junction behavior help preserve overall efficiency when substituting in power supplies or motor drivers.

Package compatibility is not merely a mechanical consideration but directly impacts heat dissipation and integration into existing PCB layouts. The TO-220 Full Mold standard offers a balance of robust thermal performance and ease of mounting, and maintaining this footprint streamlines inventory, supports automated assembly, and reduces requalification time. When evaluating replacements, it is essential to reference up-to-date datasheets with attention to secondary parameters including typical and maximum leakage currents, forward voltage drop across the expected operating range, and switching response times under relevant load profiles. Slight deviations in reverse current or forward drop, for example, can either introduce excessive heat or compromise power conversion performance.

In practice, comparative analysis often involves overlaying characteristic curves and scrutinizing variability under different temperature and load conditions. Experience shows manufacturers like Vishay, STMicroelectronics, and ON Semiconductor offer robust alternatives with proven Schottky architectures, consistent reliability, and identical footprint. Adopting series with broad market adoption helps mitigate supply chain risk, facilitate multivendor sourcing, and support rapid repair cycles without introducing unpredictable variables into circuit behavior. For high-volume designs, leveraging multivendor qualification strategies ensures continuity and operational resilience.

Performance alignment is not guaranteed through headline specifications alone. Engineering scrutiny must extend to switching loss characteristics, both under ideal and adverse conditions, to avoid performance bottlenecks or premature aging. Subtle discrepancies in surge ratings or repetitive reverse voltage endurance may affect long-term stability in demanding scenarios, such as high-frequency switching or pulse-width modulated control loops. Therefore, iterative benchtop testing and cross-verification with simulation data are indispensable steps preceding deployment.

Ultimately, a nuanced approach—balancing electrical equivalence, physical interchangeability, and long-term sourcing agility—optimizes migration strategies and future-proofs the design against unforeseen component shortages. Leveraging modular qualification protocols and maintaining adaptability between preferred vendor lists accelerates development and safeguards system integrity. In this domain, adopting replacements with mirrored junction characteristics and packaging constraints forms the foundation of robust and scalable power electronic architecture.

Conclusion

The FCH20A20 Schottky barrier diode array from KYOCERA AVX exemplifies a convergence of low forward voltage drop and high current handling, enabling efficient circuit topologies in demanding power electronics environments. At the mechanism level, the use of Schottky technology minimizes reverse recovery times, which translates directly to high-frequency operation and reduced switching losses. This intrinsic advantage is reinforced by the silicon carbide architecture, ensuring robust thermal stability and enabling consistent performance under variable load profiles.

Integration within system-level power designs leverages the device’s low conduction losses and rapid switching to improve efficiency in DC-DC converters, synchronous rectifiers, and protection circuits. The TO-220 package supports straightforward mounting and effective heat dissipation, facilitating thermal management strategies where junction temperature limits are critical. In rigorous field tests, deployment in multi-phase rectification stages has demonstrated measurable gains in conversion efficiency while limiting parasitic oscillations, contributing to overall system robustness in both industrial and automotive platforms.

Selection criteria for the FCH20A20 often center on its dual-channel configuration, which enables scalable parallel operation without sacrificing footprint constraints. Such flexibility is particularly valuable when retrofitting legacy equipment or designing for modular expandability. Attention to board layout—optimizing trace geometry and minimizing loop inductance—furthers EMI performance and maximizes the diode array’s fast response characteristics.

Addressing reliability at the enterprise procurement level, the predictable temperature behavior and controlled leakage currents provide enhanced longevity, reducing maintenance cycles and operational costs. This characteristic directly aligns with the requirements of sustainable power infrastructure and mission-critical systems, such as UPS modules and renewable energy inverters.

Efficiency gains observed in real-world deployment often stem from precise matching of component selection to load demands. For instance, when configuring high-frequency boost converters, the ability to tolerate voltage transients while maintaining low forward drop enables aggressive design margins, supporting tighter power budgets and improved overall system resilience. This capacity to dynamically balance electrical stress under varying operational scenarios constitutes a distinctive value proposition, especially where reductions in power loss and thermal signature are paramount.

Broadly, the FCH20A20 presents a compelling approach to the persistent challenges of loss minimization and system scalability in contemporary power management. Its integration accelerates the transition to more granular control architectures, fostering innovation in energy conversion efficiency and future-oriented electronics design.

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Catalog

1. Product overview of the FCH20A20 KYOCERA AVX Schottky diode array2. Key features and advantages of the FCH20A20 KYOCERA AVX3. Package and mechanical specifications of FCH20A20 KYOCERA AVX4. Electrical performance characteristics of FCH20A20 KYOCERA AVX5. Primary applications of FCH20A20 KYOCERA AVX in electronic systems6. Design considerations and reliability for FCH20A20 KYOCERA AVX7. Potential equivalent/replacement models for FCH20A20 KYOCERA AVX8. Conclusion

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Frequently Asked Questions (FAQ)

What is the main use of the AVX FCH20A20 diode array?

The AVX FCH20A20 diode array is designed for efficient rectification in power supply circuits, providing reliable 200V, 20A performance for various electronic applications.

Is the AVX FCH20A20 diode array compatible with different circuit types?

Yes, this diode array is suitable for high-current, fast recovery power rectification in a variety of electronic devices and circuits, especially where space-saving and durability are required.

What are the key features of the AVX FCH20A20 Schottky diode array?

This diode array features a maximum reverse voltage of 200V, a forward voltage of about 900mV at 10A, and a fast recovery time of less than 500ns, making it ideal for high-efficiency power rectification.

How does the AVX FCH20A20 perform in terms of durability and environmental resistance?

The diode array operates reliably in temperatures ranging from -40°C to 150°C and is packaged in a through-hole TO-220-3 package, ensuring good thermal management and robust mounting.

What are the purchasing and support options for the AVX FCH20A20 diode array?

This diode array is available in full packs of 32,034 pieces, is a new original product, and is classified with unlimited moisture sensitivity, with support available from authorized suppliers.

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